We report here a high thermoelectric performance in cadmium doped Sb 2 Si 2 Te 6 . The substitution of Ca 2+ for Sb 3+ provides a synergetic effect on the electrical transport properties, including hole concentration enhancement, valence band maximum flatting, band gap increase, and density of states effective mass enhancement in Sb 2 Si 2 Te 6 . Such effect leads to the highest power factor of 13.5 μW m −1 K −2 at 573 K and average power factor of 12.6 μW m −1 K −2 for Sb 1.97 Ca 0.03 Si 2 Te 6 . Such enhanced power factor and average power factor are ∼30% and ∼26% higher than that of pristine Sb 2 Si 2 Te 6 respectively, which is very necessary for the output power optimization of Sb 2 Si 2 Te 6 . In addition, Ca doping also induces extra point defects phonon scattering, leading to a lowest lattice thermal conductivity of ∼0.41 W m −1 K −1 at 823 K for Sb 1.99 Ca 0.01 Si 2 Te 6 , ∼15% lower than that of pristine Sb 2 Si 2 Te 6 . The simultaneous optimization in power factor and lattice thermal conductivity enables us to achieve a high peak thermoelectric figure of merit ZT of ∼1.3 at 823 K and a high average ZT of ∼0.8 for Sb 1.99 Ca 0.01 Si 2 Te 6 , showing its potential for power generator at medium temperature.
Polymer-based electronic packaging materials (such as epoxy resin, polydimethylsiloxane, polyvinyl alcohol) are widely used in chips, because they have the merits of light weight, corrosion resistance, electrical insulation and ease...
Thermoelectric performance of InSb is restricted by its low Seebeck coefficient and high thermal conductivity. Here, CuCl is employed to optimize simultaneously the electrical and thermal transport properties of InSb. The substitution of Cl for Sb results in enhanced electron effective mass, leading to high Seebeck coefficient of –159.9 μV/K and high power factor of 31.5 μW⋅cm−1⋅K−2 at 733 K for InSb + 5 wt% CuCl sample. In addition, CuCl doping creates hierarchical architectures composed of Cu9In4, Sb, Cu2Sb in InSb, leading to a strengthened phonon scattering in a wide wavelength (i.e., nano to meso scale), thus a low lattice thermal conductivity of 2.97 W⋅m−1⋅K−1 at 733 K in InSb + 5 wt% CuCl. As a result, a maximum ZT of 0.77 at 733 K has been achieved for the InSb + 5 wt% CuCl sample, increasing by ∼ 250% compared to pristine InSb.
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