Multiscale material removal modeling of chemical mechanical polishing

Seok, Jongwon; Sukam, Cyriaque P.; Kim, Andrew T.; Tichy, John; Cale, Timothy S.

doi:10.1016/s0043-1648(03)00022-x

Cited by 84 publications

(36 citation statements)

References 39 publications

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“…There are many models which describe material removal rate during lapping and polishing, for the example experiment model, the wear model and analytical model [7,8,[13][14][15][16][17]. Based on these models, it can be seen that the material removal rate Z 0 W is directly proportional to the polishing relative velocity V. If the average abrasive grit numbers are n g in a unit polished area, under the condition of an invariant polishing contact pressure, the average material removal rate Z 0 W ðtÞ is as follows [18]:…”

Section: Model Of Dimensionless Distribution Of Materials Removal Volumementioning

confidence: 99%

Design and analysis on kinematics of the lap-polisher with planet movement for optical fiber end-face

Jun

Shu

et al. 2010

Int J Adv Manuf Technol

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In order to obtain the effects of the kinematical state on the profile precision of the fiber-optic end-face in the process of lapping and polishing, a kinematical equation of the lap-polisher with planet movement is developed. Based on these equations and the tribological model of CMP, the dimensionless distribution of the material removal volume (DDMRV) and the trajectories of abrasive grains cutting on the lap-polisher are numerically simulated with the way of stochastic abrasive grains. Then, the effects of the parameters of the lap-polisher on the uniformity of the DDMRV and the trajectory on the optical fiber end surface are discussed, and the results are that the DDMRV and the trajectory of abrasive grains have a rather better value when the length L of the planet carrier and the rotational speed n 1 of the ring gear are increased and the rotation speed n H of the planet carrier is chosen in an advisable parameter region.

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Section: Model Of Dimensionless Distribution Of Materials Removal Volumementioning

confidence: 99%

Design and analysis on kinematics of the lap-polisher with planet movement for optical fiber end-face

Jun

Shu

et al. 2010

Int J Adv Manuf Technol

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“…In the region away from where chemical reaction is dominant, in which non-Prestonian behavior generally appears, this equation represents that the material removal rate of a wafer is proportional to the applied pressure on the wafer as well as to the relative velocity between the pad and the wafer. In CMP, recent research results [27,28] strongly support that the wafer and the pad are in direct contact during CMP, in which the abrasives are embedded in the pad asperities, so that twobody abrasion [29] is regarded as the dominant removal mechanism. Based on this observation, the relative velocity in Preston's equation is that between the tool and the workpiece to be finished.…”

Section: Interpretations Of Materials Removal Mechanism Associated Witmentioning

confidence: 99%

A study on the fabrication of curved surfaces using magnetorheological fluid finishing

Seok

Kim

Jang

et al. 2007

International Journal of Machine Tools and Manufacture

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“…However, these models did not consider the effect of pad surface roughness (asperity height distribution) on polishing removal rate. There are quite a few other publications considering the effect of pad roughness and other pad properties on polishing removal rate [21,[47][48][49][50][51][52][53][54].…”

Section: Review Of Modeling Of Pad Effects On Polishing Performancementioning

confidence: 99%

Pads for IC CMP

Wang

Paul

Kobayashi

et al. 2007

Microelectronic Applications of Chemical Mechanical Planarization

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The chemical-mechanical polishing or planarization (CMP) process is a complex interplay between the wafer and the consumables involved. The consumables include slurry, pad, conditioner, and so on. During polishing, the pad carries the slurry and delivers it to the wafer surface. It also transmits the normal and shear forces from the polisher to the wafer. Therefore, polishing pad plays a critical role in the CMP process and influences the outcomes such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), wafer-to-wafer nonuniformity (WTWNU), step height reduction efficiency (SHRE), and defect counts.As the CMP process is a combination of mechanical and chemical processes, the polishing pad has to endure repeated mechanical stress and constant chemical attacks. The applied downforce and polishing-induced friction force cause various levels of compression and abrasion. Slurry components such as oxidizers and acids can react with different components of the pads. Thus the polishing pad must have sufficient mechanical integrity and chemical resistance to survive the rigors of polishing. Polishing pads must balance the needs of hardness, modulus for planarity, and strength to resist wear and tear during polishing. Pads must also be able to survive the aggressive slurry chemistry used in CMP polishing without degrading, delaminating, blistering, or warping, since CMP slurries for the polishing of interlevel dielectric (ILD) oxide layers are usually highly alkaline with pH as high as 11, and CMP slurries for the polishing of metal films are highly acidic Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Multiscale material removal modeling of chemical mechanical polishing

Cited by 84 publications

References 39 publications

Design and analysis on kinematics of the lap-polisher with planet movement for optical fiber end-face

Design and analysis on kinematics of the lap-polisher with planet movement for optical fiber end-face

A study on the fabrication of curved surfaces using magnetorheological fluid finishing

Pads for IC CMP

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