Multiple stacking of InGaAs/GaAs (731) nanostructures

Xie, Y. Z.; Kunets, Vasyl P.; Wang, Z. M.; Dorogan, V. G.; Mazur, Yuriy I.; Wu, Jiang; Salamo, Gregory J.

doi:10.1007/bf03353596

Cited by 11 publications

(9 citation statements)

References 13 publications

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“…A simple approach to make Si quantum dot super lattices has been described by Zacharias et al [ 3 ]. Similar multi-layer structure was also suggested for the formation of InGaAs quantum dots [ 4 ]. The effective bandgap of silicon thin films made this way can be varied by varying the size of the quantum dots.…”

Section: Introductionsupporting

confidence: 57%

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Perez-Würfl

Gentle

et al. 2010

Nanoscale Res Lett

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As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO2) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H3PO4) etching, nitrogen (N2) gas anneal and forming gas (Ar: H2) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.

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Section: Introductionsupporting

confidence: 57%

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Perez-Würfl

Gentle

et al. 2010

Nanoscale Res Lett

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“…In order to achieve higher performance quantum dot devices, large research efforts have been aimed at optimizing QDs growth, including increasing QDs density, reducing strain, fabrication of ordered QD arrays, etc. 3–5. Stranski–Krastanow (S‐K) growth mode has been widely used to fabricate QDs through strain‐driving island formation.…”

Section: Introductionmentioning

confidence: 99%

Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces

Wang

et al. 2010

Physica Rapid Research Ltrs

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We present a comparative study of gallium (Ga) and aluminium (Al) droplets fabricated on GaAs (100) and AlAs (100) surfaces. Higher density of Ga droplets is achieved on AlAs surface compared with GaAs surface. Similarly, the density of Al nanostructures is higher on AlAs surface than on GaAs surface, even though different morphologies are obtained on each surface. Further, while uniform Ga droplets are formed on both GaAs and AlAs surfaces, Al rings and dots, with big inhomogeneity, are observed on GaAs and AlAs surface, respectively. This investigation suggests that size and shape of nanostructures grown by the droplet epitaxy method can be designed by employing different surfaces. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…19,20 As shown in Fig. 1, the (731) and (531) HI planes do not belong to any of the lines connecting two different stable planes.…”

Section: Resultsmentioning

confidence: 95%

“…2,11,14,18 Because HI surfaces within the ST have complex bulk-truncated atomic arrays, only a few of these GaAs planes have been studied for 1DPA formation: the (631), (731), and (531) planes. 7,19,20 Due to this complexity, it is also quite remarkable that some authors have found energetically stable surfaces inside the ST for crystals such as Si, Ge, and GaAs. 21,22 In compound semiconductors, the only stable plane within the ST yet reported is GaAs (11 5 2)A, as determined by in situ scanning tunneling microscopy and first-principles calculations of electronic structure.…”

Section: Resultsmentioning

confidence: 99%

New orientations in the stereographic triangle for self-assembled faceting

et al. 2016

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Energetically unstable crystalline surfaces, among their uses, can be templates for the growth of periodic arrays of one-dimensional (1D) nanoscale structures. However, few studies have explored self-assembled faceting on high-index (HI) planes inside the stereographic triangle, and extant studies have not produced any criteria for encouraging the formation of one-dimensional periodic arrays. In this Letter, by analyzing the MBE growth of homoepitaxial facets on (631)A GaAs, a HI plane inside the triangle, we present a criteria to produce highly uniform 1D periodic arrays on unexplored surfaces. These families of planes are those belonging to the lines connecting the energetically stable HI GaAs (11 5 2) plane with any of the (100), (110), and (111) planes at the corners of the stereographic triangle. This novel strategy can lead to new possibilities in self-assembling 1D structures and manipulating physical properties, which in turn may result in new HI- and 1D-based experiments and devices.

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Multiple stacking of InGaAs/GaAs (731) nanostructures

Cited by 11 publications

References 13 publications

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces

New orientations in the stereographic triangle for self-assembled faceting

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