New orientations in the stereographic triangle for self-assembled faceting

Méndez-Camacho, R.; Méndez-García, V.H.; López‐López, M.; Cruz‐Hernández, E.

doi:10.1063/1.4954998

Cited by 4 publications

(3 citation statements)

References 26 publications

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“…By choosing the appropriate growth parameters, the high-index surfaces break up into microscopic step arrays, which lead to straight coherently aligned multi-atomic step arrays in preferential directions, 12) through surface free energy minimization processes. 13) As described in the experimental section, the substrate temperature was decreased to proceed with the incorporation of InAs, which changes both the sample surface energy and the strain status at the interface. All of the images in Fig.…”

Section: Resultsmentioning

confidence: 99%

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

Eugenio-López

Mercado-Ornelas

Pallavi

et al. 2018

Jpn. J. Appl. Phys.

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The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (P As ) and the cation/anion terminated surface, i.e., A-or B-type GaAs(631). The self-organization of QDs occurs for both surface types along ½ 113, while the QD shape and size distribution were found to be different for the self-assembly on the A-and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs.

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Section: Resultsmentioning

confidence: 99%

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

Eugenio-López

Mercado-Ornelas

Pallavi

et al. 2018

Jpn. J. Appl. Phys.

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“…The accuracy of the methods presented here cannot rule out the presence of other facets, which would have orientations in between the ones discussed so far. High-index planes have been observed on GaAs and can even be as stable as low-index ones [50][51][52]. The driving force for the existence of such surfaces is the minimization of the number of dangling bonds and strain.…”

Section: Discussionmentioning

confidence: 99%

Faceting of local droplet-etched nanoholes in AlGaAs

Vonk

Slobodskyy

Keller

et al. 2018

Phys. Rev. Materials

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Nanoholes, drilled in the (001) surface of AlGaAs by local Al droplet etching, are shown to consist of faceted inner walls. The most prominent facets of the inverted pyramidlike nano-sized etch pits are the {111}A and {111}B surfaces, which differ in their atomic surface terminations. In the [110] direction, the {111} facets change to {112} and/or {113}, which are both stepped surfaces with (111)A terraces. Etching-temperaturedependent data indicate that this facet transition seems kinetically hindered up to etch temperatures above 660°C, at which point the walls along [110] have already evolved completely towards {111}B facets. The redeposited ring material outside the nanohole develops facets with indices of (115) and higher, thereby forming relatively flat structures. The facets and their indices are unraveled by a combination of atomic force microscopy, scanning electron microscopy, and x-ray diffraction, which is performed on an ensemble as well as on a single hole using nanodiffraction. These results imply that this nanoconfined etching process can be largely understood in a vapor-liquid-solid scheme, which includes the bulk thermodynamics in the AlGa As system, the surface energies of low index facets, and their etch rates and surface terminations.

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“…In figure 3 we show a similar map of the out-of-plane strain of four tensile strained In x Ga 1-x P (x∼38%-40%) layers in a lattice matched (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P matrix and a region with nominal {GaP/(Al 0.8 Ga 0.2)0.5 In 0.5 P} superlattice grown on (211)A GaAs substrate. Possibly due to a different nature of the interface structure for (211)A surface [22,23] and a higher role of the segregation effects for this surface orientation no clear observation of GaP-enriched superlattice layers was possible. However, the average tensile strain due to excess GaP concentration of ∼10% is clearly manifested in the nominal barrier region and the effect of the barrier height modification as a function of substrate orientation [13] should be present, even it is much weaker as compared to the MBE case for the same substrate orientation.…”

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confidence: 97%

(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

Ledentsov

Shchukin

Shernyakov

et al. 2017

Semicond. Sci. Technol.

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We report on low threshold current density (<400 A cm −2 ) injection lasing in (Al x Ga 1-x ) 0.5 In 0.5 P-GaAs-based diodes down to the green spectral range (<570 nm). The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metalorganic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at reflection of the injected nonequilibrium electrons preventing their escape from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15°for (611)A substrates. The lasing at the wavelength of 569 nm is realized at 85 K. In an orange-red laser diode structure low threshold current density (190 A cm −2 ) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrated room temperature lasing at 628 nm at ∼2 kA cm −2 and a total power above 3 W. The red laser diodes grown on (211)A substrates demonstrated a far field characteristic for vertically multimode lasing indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However, as expected from previous research, the temperature stability of the threshold current and the wavelength stability were significantly higher for (211) A-grown structures.

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New orientations in the stereographic triangle for self-assembled faceting

Cited by 4 publications

References 26 publications

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

Faceting of local droplet-etched nanoholes in AlGaAs

(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

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