Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces

Wu, Jiang; Wang, Zhiming M.; Li, Alvason Zhenhua; Li, Shibin; Salamo, Gregory J.

doi:10.1002/pssr.201004402

Cited by 12 publications

(8 citation statements)

References 16 publications

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“…At this aspect ratio the central line and height variations along the nanotracks become vivid. The terminating form of T2 is very different to the flat nanodisc of T1 and similar to that observed in the synthesis of in-plane nanowires, 26,28 and asymmetric nanoholes, 37 counting its preferential assembly of a "pit" along the ±[110] direction. Nanotracks terminating in this way -with a high raised lips on the trailing side -are uncommon and only noted here for completeness.…”

Section: Morphological Characterization Of In-plane Gaasbi Nanotrackssupporting

confidence: 62%

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

et al. 2015

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In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation "hot spot" at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled nonmonotonous structure In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation "hot spot" at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled non-monotonous structure.

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Section: Morphological Characterization Of In-plane Gaasbi Nanotrackssupporting

confidence: 62%

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

et al. 2015

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“…However, a drawback of SK growth mode is that strain is inevitably involved during QD formation. Recently, lots of research efforts have been made on droplet epitaxy (DE), which is capable of fabricating nanostructures on lattice‐mismatched as well as lattice‐matched materials 1, 2. Strain‐free optical pumped quantum ring (QR) lasers and nanostructure photodetectors have also been demonstrated by using DE 3, 4.…”

Section: Introductionmentioning

confidence: 99%

Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy

Wang

et al. 2012

Physica Rapid Research Ltrs

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We investigate the formation of GaAs quantum dash pairs with different coverages by droplet epitaxy. The GaAs quantum dash pairs of various sizes are fabricated by high temperature droplet epitaxy. Dual‐sized quantum dash pairs are observed along $[01\bar 1]$ orientation. Depending on the Ga cov‐ erage, the width of the quantum dash pairs can be tuned from ∼100 nm to ∼300 nm while keeping the height in the range of 4 nm to 10 nm. The coverage dependence of quantum dash pairs is also confirmed with photoluminescence measurement. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Homo‐epitaxial nano‐crystalline templates can be fabricated and thus have been used for the fabrication of many hybrid quantum and nano‐structures 6, 7. Quantum dots (QDs) and rings are most commonly studied structures and also ring‐shaped quantum structures, QD molecules, various nanostructure complex ensembles of quantumring geometry and MDs, nano‐hole drilling or local etching effect and running MDs are only a few examples of DE 8–17, as observed by microscopy 27–29. Also optoelectronic device applications such as solar cells using GaAs quantum rings, inter‐sublevel Infrared photo‐detector and lasers have been demonstrated by DE 18–20.…”

Section: Introductionmentioning

confidence: 99%

Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment

Lee

Wang

et al. 2012

Physica Status Solidi (a)

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A sharp contrast of the density and size of Ga metal droplets (MDs) on strip patterned GaAs (100) is demonstrated through droplet epitaxy (DE) and photolithography technique. As clearly evidenced by scanning electronic microscope (SEM) and atomic force microscope (AFM), MD density between etched (patterned) and un‐etched (un‐patterned) surfaces can be sharply different up to one order of magnitude under an identical growth condition. Etched surface exhibits much higher density and smaller diameter and height of MDs.

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Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces

Cited by 12 publications

References 16 publications

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy

Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment

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