Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy

Abstract

We investigate the formation of GaAs quantum dash pairs with different coverages by droplet epitaxy. The GaAs quantum dash pairs of various sizes are fabricated by high temperature droplet epitaxy. Dual‐sized quantum dash pairs are observed along $[01\bar 1]$ orientation. Depending on the Ga cov‐ erage, the width of the quantum dash pairs can be tuned from ∼100 nm to ∼300 nm while keeping the height in the range of 4 nm to 10 nm. The coverage dependence of quantum dash pairs is also confirmed with photoluminescence measurement. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Epitaxially Self‐Assemblied Quantum Dot Pairs

“…It is also worth noting that the two dots in a pair are aligned in the [0–11] direction due to the anisotropic nature of the diffusion process on the GaAs (100) surface . Following this work, we demonstrated size‐tunable QDPs with control over Ga coverage, which has also been confirmed by a photoluminescence measurement . The size of the QDPs increases while increasing Ga coverage, as shown in Figure c.…”