Multifunctional Dielectric Layers for the Fabrication of Ultra-Simplified n-PERT c-Si Solar Cells

Cabal, R.; Blévin, Thomas; Monna, R.; Veschetti, Y.; Dubois, Sébastien

doi:10.1016/j.egypro.2016.07.044

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…Moreover, compared to other ex-situ doping processes (e.g. based on BBr3 diffusion or ion implantation), the one proposed here involves only one additional process step compared to in-situ doping, namely the deposition of the SiON:B doping layer by PECVD, which can be used as an anti-reflective coating and thus does not require subsequent etching [34]. We also note that the as-dep Si(i)/SiON:B stack could in principle be deposited through a unique PECVD step, which could make this ex-situ doping process comparable to in-situ doping in terms of number of process steps.…”

Section: Variation Of the Doping Profile With Increasing Annealing Temperaturementioning

confidence: 99%

Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cells

Morisset

Cabal

Giglia

et al. 2021

Solar Energy Materials and Solar Cells

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Passivating the contacts of crystalline silicon (c-Si) solar cells (SC) with a poly-crystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) is currently sparking interest for reducing carrier recombination at the interface between the metal electrode and the c-Si substrate. However, due to the interrelation between different mechanisms at play, a comprehensive understanding of the surface passivation provided by the poly-Si/SiOx contact in the final SC has not been achieved yet. In the present work, we report on an original ex-situ doping process of the poly-Si layer through the deposition of a B-rich dielectric layer followed by an annealing step to diffuse B dopants in the layer. We propose an in-depth investigation of the passivation scheme of the resulting B-doped poly-Si/SiOx contact by first comparing the surface passivation provided by ex-situ doped and intrinsic poly-Si/SiOx contacts at different steps of the fabrication process. The excellent surface passivation properties obtained with the ex-situ doped poly-Si(B) contact (iVoc = 733 mV and J0 = 6.1 fA cm -2 ) attests to the good quality of this contact. We then propose further STEM, ECV and ToF-SIMS characterizations to assess: i) the evolution of the microstructure and

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Section: Variation Of the Doping Profile With Increasing Annealing Temperaturementioning

confidence: 99%

Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cells

Morisset

Cabal

Giglia

et al. 2021

Solar Energy Materials and Solar Cells

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“…Bifacial cells produced by Yingli, 1) Mission Solar, LG, and PVGS 2) are of the passivated emitter, rear totally diffused type (PERT). [3][4][5][6] The bifacial cells produced by Panasonic=Sanyo are based on heterojunction technology. 7) Other cell types such as variations of the passivated emitter and rear cell (PERC) 8,9) and even back contact cell concepts can be bifacial.…”

Section: Introductionmentioning

confidence: 99%

Bifacial aspects of industrial n-Pasha solar cells

Aken¹,

Tool²,

Kossen³

et al. 2017

Jpn. J. Appl. Phys.

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Bifacial photovoltaic (PV) modules make optimal use of diffuse and ground-reflected light. The gain in energy yield depends on both the local climatic conditions and the PV system layout. These determine the additional irradiance on the rear of the PV panels. The rear response of the (laminated) solar cell(s) determines how much additional energy this rear irradiance generates. Based on our experiments and simulations, the main parameters that determine the bifaciality factor of solar cells with a front side junction are the rear metal coverage, the base resistivity and the diffusion profile on the rear. These will be evaluated and discussed in this paper. Front-junction solar cells with low base resistivity have a lower short circuit current when illuminated from the rear due to enhanced recombination in the BSF. Stencil printed rear metallization yields a higher bifaciality factor compared to screen printed by reducing the metal coverage and consumption and maintaining the front side efficiency. For our optimized 239 cm 2 bifacial cell we estimate that the output with 20% contributed by the rear side is equivalent to that of a 24.4% efficient monofacial cell.

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