In this work, two process simplifications for n-type PERT (passivated emitter rear totally diffused) bifacial solar cells are investigated. Both are based on a single thermal treatment for elaborating boron and phosphorus doped regions aiming at reducing the number of high temperature steps of standard process. The first simplification shows a mixed co-diffusion from a gaseous source of phosphorus and a boron doped dielectric layer elaborated by low frequency plasma enhanced chemical vapor deposition (PECVD). The second exhibits two independent ion implantations, followed by a co-anneal/activation step. In both cases, implied open-circuit voltages are similar to standard process ($660-670 mV) and emitters allow good contacting by screen-printing (ρ c ¼ 3.0-5.0 mΩ cm 2). PERT cells resulting from these processes show very promising performances with efficiency up to 19.7% on industrial 156 Â 156 mm 2 pseudo square Cz wafers.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.