Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI

Sampedro, Carlos; Gámiz, F.; Godoy, A.; Valin, R.; García‐Loureiro, Antonio J.; Ruiz, Francisco G.

doi:10.1016/j.sse.2009.12.007

Cited by 43 publications

(30 citation statements)

References 19 publications

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“…Finally I D -V G curves are shown in Figure 8 for the Fin-FET under study considering different approaches including: the present one in the ballistic regime (3DMSB-EMC), 1D ballistic NEGF, 3D-DD with quantum corrections and 2D ballistic electron gas (2DMSB-EMC [13] and NanoMOS [14]) where a fin height correction has been used to establish a fair comparison between 2D and 3D simulators. As expected, all the models behave similarly in subthreshold regime whereas the different transport models play an important role above threshold.…”

Section: Resultsmentioning

confidence: 99%

3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

Sampedro

Donetti

Gamiz

et al. 2014

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Abstract-In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consistent framework that couples a MSB-EMC transport engine for a 1D electron gas with a 3DPoisson-2DSchrödinger solver. Here we use a FinFET with a physical channel length of 15nm as an example to demonstrate the applicability and highlight the benefits of the simulation framework. A comparison of the 3DMSB-EMC with Non-Equilibrium Greens Functions (NEGFs) in the ballistic limit is used to verify and validate our approach.

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Section: Resultsmentioning

confidence: 99%

3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

Sampedro

Donetti

Gamiz

et al. 2014

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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“…The starting point of the simulation frame is the MS-EMC code presented elsewhere [3], [4]. The tool is based on the mode-space approach of quantum transport [5], where the 1D Schrödinger equation is solved in different slices along the confinement direction, whereas the 2D Bolzmann Transport Equation is solved in the transport plane as showed in Figure 1.…”

Section: Methodsmentioning

confidence: 99%

Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

Medina-Bailón

Sadi

Sampedro

et al. 2017

2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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Abstract-The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.

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“…The starting point of the simulation frame is a MS-EMC code that has already demonstrated its capabilities in different scenarios [4][5]. The tool, based on the mode-space approach of quantum transport, considers the system decoupled in the confinement direction, where the Schrödinger equation is solved for every considered slice, and the transport plane, using the Ensemble Monte Carlo solution of the Boltzmann Transport Equation (BTE) to describe the dynamics of charge carriers in the device.…”

Section: Simulation Approachmentioning

confidence: 99%

Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms

Medina-Bailon¹,

Sampedro²,

Padilla³

et al. 2017

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Abstract-The reduction of the critical dimensions of transistor architectures makes mandatory the inclusion of quantum effects different than standard confinement becomes in advanced device simulators to describe the electrical behavior. In particular, direct tunneling from source to drain, band-to-band tunneling and gate leakage mechanisms considering direct and trap assisted tunneling are of especial interest. This work presents a study of these mechanisms in Fully Depleted Silicon-OnInsulator (FDSOI) and FinFET devices using a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator.

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Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI

Cited by 43 publications

References 19 publications

3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms

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