3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

Sampedro, Carlos; Donetti, L.; Gamiz, F.; Godoy, A.; Ruiz, Francisco G.; Georgiev, Vihar P.; Amoroso, Salvatore; Riddet, Craig; Towie, Ewan; Asenov, A.

doi:10.1109/sispad.2014.6931553

Cited by 11 publications

(9 citation statements)

References 11 publications

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“…This simulation scheme presents two main advantages with respect to the full-quantum approach: the first one is its affordable computational time and the second one is the inclusion of the quantum transport phenomena in a separate manner so that they can be switched ON and OFF to check their effect. Furthermore, despite the fact that the FinFET is a 3-D structure, this code can properly simulate it: a 2-D description (which assumes height much higher than thickness) can be appropriate for a FinFET with a sufficiently high aspect ratio [10].…”

Section: Methodsmentioning

confidence: 99%

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Medina-Bailón

Padilla

Sadi

et al. 2019

IEEE Trans. Electron Devices

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Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way. This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLM) accounting for both direct and trap assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multi-subband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon on insulator, double-gate silicon on insulator, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short channel lengths. Index Terms-Band-to-band tunneling (BTBT), direct sourceto-drain tunneling (S/D tunneling), double-gate silicon on insulator (DGSOI), FinFET, fully depleted silicon on insulator (FDSOI), gate leakage current, Multi-Subband Ensemble Monte Carlo (MS-EMC) I. INTRODUCTION T HE aggressive reduction of device dimensions has increased the importance of short-channel effects (SCEs) and leakage mechanisms as relevant agents degrading the device performance and leading, for example, to the loss of gate control over the channel and the increase of the drain influence. The variation of the threshold voltage (V th) as the channel length decreases is one of the main effects that needs study, without losing sight of the fact that SCEs do not only affect V th but also the subthreshold characteristics contributing to off-state current degradation. The inclusion of additional physical phenomena is thus required in the modeling of new technological nodes, in order

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Section: Methodsmentioning

confidence: 99%

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Medina-Bailón

Padilla

Sadi

et al. 2019

IEEE Trans. Electron Devices

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“…In terms of subbands, the lowest energy was attained for

in the planar transistor, whereas it shifted to

in the vertical one. It is important to notice that, although the FinFET is a 3D structure and our simulation approach is 2D, it has been shown that FinFETs with fin heights much larger than their corresponding thicknesses show similar behavior in all transport regimes when using 2D and 3D simulations [ 10 ].…”

Section: Simulation Framework and Device Structuresmentioning

confidence: 99%

Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

et al. 2021

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The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and self-consistent solutions focusing on different parts of the simulation flow. The first solution reformulates the tunneling probability computation by modulating the WKB approximation in a suitable way. The second corresponds to a change in the current calculation technique based on the utilization of the Landauer formalism. The results from both solutions are compared and contrasted to NEGF results from NESS. We conclude that the current computation modification constitutes the most suitable and advisable strategy to improve the MS-EMC tool.

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“…To model a non-planar device, such as GAA MOSFETs, we employ a simulator based on the MS-EMC approach. This method has been widely and successfully employed for the simulation of planar semiconductor devices [6,7,8,9], and only recently it has been applied to 3D devices [10,11]. The simulator is based on the space-mode approach [12], where the SE is solved in several cross sections perpendicular to the transport direction z, for each considered conduction band valley.…”

Section: Simulator Descriptionmentioning

confidence: 99%

Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs

Donetti

Sampedro

Ruiz

et al. 2018

Solid-State Electronics

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We developed a Multi-Subband Ensemble Monte Carlo simulator for non-planar devices, taking into account two-dimensional quantum confinement. It couples self-consistently the solution of the 3D Poisson equation, the 2D Schrödinger equation, and the 1D Boltzmann transport equation with the Ensemble Monte Carlo method. This simulator was employed to study MOS devices based on ultra-scaled Gate-All-Around Si nanowires with diameters in the range from 4 nm to 8 nm with gate length from 8 nm to 14 nm. We studied the output and transfer characteristics, interpreting the behavior in the sub-threshold region and in the ON state in terms of the spatial charge distribution and the mobility computed with the same simulator. We analyzed the results, highlighting the contribution of different valleys and subbands and the effect of the gate bias on the energy and velocity profiles. Finally the scaling behavior was studied, showing that only the devices with D = 4 nm maintain a good control of the short channel effects down tho the gate length of 8 nm.

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3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

Cited by 11 publications

References 11 publications

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs

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