Multi-domain Gunn diodes with multiple hot electron launchers: a new approach to MM wave GaAs Gunn oscillator optimization

Abstract

The optimization of millimeter wave Gunn oscillators comprises two avenues, namely the use of heterojunctions for hot electron injection and multidomain operation Gunn diodes. A combination of these two techniques is proposed resulting in multiple hot electron launchers spaced throughout the diode. The results presented here suggest that this configuration proves to be a very promising option which warrants further investigation.

Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

“…To date, conventional Gunn diodes consist of a single transit region and usually yield an average power of approximately 0.1 W. For high frequency generation (77-94 GHz), the devices need to be quite short (∼1 µm) thus allowing only a small potential to be applied before the device breaks down. In order to get around this problem, several authors have suggested incorporating multiple transit regions of equal lengths into the Gunn diodes structure [1][2][3], and have shown that these devices offer significant improvements in output power over conventional, single-transit structures.…”

Monte Carlo modelling of multiple-transit-region Gunn diodes

“…Such multipletransit-region Gunn diodes were first proposed by Tsay et al [9], but very little work has subsequently been done on this idea. Indeed, we are aware of only one other publication which has reported on simulations of double-transit-region Gunn diodes [10].…”