Multi-beam mask writer MBM-2000PLUS

Nomura, Haruyuki; Matsumoto, Hiroshi; Yamaguchi, Kazuya; Kimura, Hayato; Nakahashi, Satoshi; Nakayamada, Nariaki

doi:10.1117/12.2616664

Cited by 8 publications

(13 citation statements)

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“…SVSB writing has been mainly used for the semiconductor design nodes down to 5 nm (N5), and MB writing is used for beyond it. 2) NuFlare Technology has been developing both SVSB [3][4][5][6][7][8][9] and MB mask writing systems [10][11][12][13][14][15][16][17][18][19][20] (Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, development of NuFlare Technology’s multi-beam (MB) mask writing system MBM-2000 series is reviewed, and future plans for the MBM series are discussed. The MB mask writing systems were designed on the basis of unique concepts suitable for high-volume production of leading-edge masks, i.e., high beam current density, a reliable beam blanking aperture array (BAA) system with a 50-keV single-stage acceleration optics, high-speed inline pixel-level dose correction, and a distinctive hardware system for charging effect reduction. The latest MB mask writing system, MBM-2000PLUS, achieves a high throughput of 8.7 hours in a 104×130 mm2 writing area for a 150 μC/cm2 resist thanks to a high beam current density of 3.2 A/cm2. In addition, a global position accuracy of 1.2 nm, a local position accuracy of 0.5 nm, and a local critical dimension uniformity of 0.61 nm are achieved. The BAA system has shown long-term stable operation for more than one year. The high productivity and writing accuracy realized by NuFlare Technology’s concepts will contribute to further miniaturization of semiconductors.

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Section: Introductionmentioning

confidence: 99%

Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

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“…It is known that inverse lithography technology (ILT) offers superior quality with challenging requirements in lithographical problems [1] . It has driven the development for curvilinear mask, which is made realistic by the multi-bean mask writers (MBMW) [2] . However, the high quality of results requires a large amount of computation.…”

Section: Introductionmentioning

confidence: 99%

Curvilinear mask handling in OPC flow

Chen¹,

Chang²,

Wu³

et al. 2023

DTCO and Computational Patterning II

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The edge-based OPC has been serving the industry for more than 20 years with few changes in the way to alter the mask. In the past 10 years, ILT pioneers in the creation of the curvilinear mask using alternate algorithms. The two approaches differ so much that the experiences in conventional OPC do not easily translate to the use of ILT and vice versa. In this paper, we report a new system for curvilinear OPC built on top of the conventional OPC workflow without being limited to moving edges. It creates and manipulates the curvilinear shapes by generalizing the edge-based OPC to vertices. Conventional OPC techniques, including dissection, classification, target point placement, etc., keep playing central roles. Full-chip correction results demonstrate the good performance of the curvilinear mask for both contact and line/space patterns. The runtime cost of adoption is reported.

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“…This becomes less productive in mask manufacturing. Electron multi-beam (MB) mask writing systems have been developed [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] to address the issue.…”

Section: Introductionmentioning

confidence: 99%

Current performance and future plans on electron multi-beam mask writers toward high-NA EUV era

Matsumoto¹,

Nomura²,

Kimura³

et al. 2023

Novel Patterning Technologies 2023

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Electron multi-beam mask writers play a key role to expand EUV lithography usage in device mass production. It was in May 2021 when the MBMTM-2000 was released by NuFlare Technology, Inc. Since then, it has been installed at sites of mask manufactures. Accordingly, it supports their mask development and production. On top of reliable inherited mask writing technologies, newly developed technologies, which have achieved objectives, enable the multi-beam writer to make many contributions. In June 2022, the MBMTM-2000PLUS for the 2 nm node device development eventually debuted. The increased beam current density, 3.2 A/cm2 allows this latest mask writer to print a mask with productive writing time even using lower sensitivity resists. A charge effect reduction (CER) is a hardware solution to reduce amount of the resist surface charge. Thanks to adapting CER2.0, which is upgrade version of CER1.0, the image placement error caused by the resist surface charge effect in the MBMTM-2000PLUS is reduced by 50% as compared with the MBMTM-2000 with optics CER1.0. This successor also takes over essential functions including pixel level dose correction (PLDC), charge effect correction (CEC), and glass thermal expansion correction (GTEC) from the MBM-2000. In this paper, the current performance of MBM series mask writers and the key architectures above-mentioned have been discussed. We also explain our strategies to keep continuous throughput improvement by optimizing items such as beam size, data transfer speed, beam current density and so on. Our roadmap indicates that NuFlare Technology, Inc. makes contribution to the high-NA EUV ecosystem.

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Multi-beam mask writer MBM-2000PLUS

Cited by 8 publications

References 0 publications

Recent progress and future of electron multi-beam mask writer

Recent progress and future of electron multi-beam mask writer

Curvilinear mask handling in OPC flow

Current performance and future plans on electron multi-beam mask writers toward high-NA EUV era

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