MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications

Abstract

In this work we present the influence of in situ deposited non-continous SiN layer and the chemical precursors III/V mole ratio change during GaN buffer growth for AlGaN/GaN/Si(111) heterostructures with low temperature AlN interlayer on their crystalline quality and electrical mobility of two dimensional electron gas (2DEG). We show, that application of SiN layer resulted in a decrease of (0002) full width at half maximum of diffraction peak below 400 arcsec and build-in stress in 2 µm thick heterostructures below 200 MPa without any relaxation visible on the surface. In optimized AlGaN/GaN heterostructures, by altering V/III mole ratio during growth of GaN subbuffer, the maximum 2DEG mobility of 2057 cm 2 V −1 s −1 , measured by impedance spectroscopy method, was obtained.

Freestanding Membranes for Unique Functionality in Electronics

“…The superior performances not only originate from these inherent material properties of GaN itself but also are related to the device technology based on AlGaN/GaN heterostructures. Because of the high mobility of the 2D electron gas (2DEG) formed at the AlGaN–GaN interface, a lateral device called a high-electron-mobility transistor (HEMT) offers tremendous potential for power switching and radiofrequency (RF) applications. , However, the large strain and defect at the AlGaN–GaN interface have become one of the main challenges for high-performance HEMT devices. Recent studies have shown that layer transfer technology would resolve the issue by controlling the 2DEG quality .…”

Recent Advances in GaN‐Based Power HEMT Devices

“…Owing to the high mobility of 2D electron gas (2DEG) formed at the AlGaN/GaN interface, a lateral device called heterojunction field‐effect transistor (HFET), also known as high electron mobility transistor (HEMT), offers tremendous potential to the power switching and radio frequency (RF) applications. [ 9–11 ] To date, GaN‐based materials are generally heteroepitaxial grown on the foreign substrates of Si, sapphire, and silicon carbide (SiC) by metal‐organic chemical vapor deposition (MOCVD). [ 12–16 ] For power electronic applications, GaN HEMTs fabricated on Si substrate are the most usual structures owing to their cost‐effective large‐size wafer and conductive properties.…”

Investigation of Electric Field Profile and associated parameters with Embedded Metal Layer in Field Plate AlGaN/GaN HEMTs

“…The enhanced drift velocity and higher breakdown field of GaN devices result in lower losses when the devices are operated at high voltage and temperature [4,5]. The existence of twodimensional electron gas (2DEG) at the interface of AlGaN/GaN in heterojunction field-effect transistor (HFET), also referred to as high electron mobility transistor (HEMT), presents immense potential for RF and power switching application [6].…”