MOS trench gate field-controlled thyristor

Abstract

A new device structure for a field-controlled thyristor (FCI') utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. 2-D computer modeling of static and dynamic characteristics was performed. This new device exhibits a good forward conduction characteristic with a low forward voltage drop at high current densities.Simulation results on ¥ansient turn-off showed a turn-off capability of 500A/ cm with the use of a reasonable gate bias. Experimental devices of the UMOS FCf were designed and fabricated. A turn-off current of 3.8 amperes with a very high turn-off current gain has been achieved.This is the first time that a UMOS FCf was analyzed numerically and consistently demonstrated experimentally.