The accumulation channel driven bipolar transistor (ACBT)

Thapar, N.; Baliga, B. Jayant

doi:10.1109/55.568754

Cited by 5 publications

(2 citation statements)

References 28 publications

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“…The combined device has a complex structure and is not good for reducing the cost as well as increasing the integrated level. Therefore, some new devices based on the MOS gate controlled device and the MOS thyristor have been presented such as Insulated-Gate Bipolar Transistor (IGBT), MOS-Controlled Thyristor (MCT), and etc [1,2] . Professor Zeng presented a novel device model, Bipolar Junction MOSFET (BJMOSFET), and investigated the Direct Current (DC) characteristics of BJMOSFET in detail [3−5] .…”

Section: Introductionmentioning

confidence: 99%

“…On the psilicon substrate that has low impurity concentration near to intrinsic case, the n + region and p + region with high impurity concentration are diffused respectively, and then the metal electrodes are connected as its cathode K, anode A and gate G. The configuration of BJMOSFET is 1 similar to that of traditional MOSFET but the n + drain region gives place of p + region in BJMOSFET, and a p + n junction can be formed between the drain and the channel. BJMOSFET, as a gate-controlled device, has not only high input impedance, but also two kinds of carriers contributing to the device conduction, so that the large drain current can be obtained.…”

Section: Introductionmentioning

confidence: 99%

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Research of BJMOSFET frequency characteristics

Zeng

Yang

YuQuan

et al. 2006

J. of Electron.(China)

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The parasitic capacitance effect and its influence to the performance have been investigated in Bipolar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET). The frequency characteristic equivalent circuit and high frequency response model of BJMOSFET have been presented. The frequency characteristic of BJMOSFET is simulated using the multi-transient analytical method and PSPICE9 simulator. The conclusions that BJMOSFET owns less total capacitance, wider frequency band, better transient characteristic and better frequency responses are reached by comparing with the traditional MOSFET at the same structure parameters and bias conditions. BJMOSFET, as a novel promising high frequency device, would be desired to find application in future integrated circuit.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%