Research of BJMOSFET frequency characteristics

Abstract

The parasitic capacitance effect and its influence to the performance have been investigated in Bipolar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET). The frequency characteristic equivalent circuit and high frequency response model of BJMOSFET have been presented. The frequency characteristic of BJMOSFET is simulated using the multi-transient analytical method and PSPICE9 simulator. The conclusions that BJMOSFET owns less total capacitance, wider frequency band, better transient characteristic and better frequency responses are reached by comparing with the traditional MOSFET at the same structure parameters and bias conditions. BJMOSFET, as a novel promising high frequency device, would be desired to find application in future integrated circuit.

Effect of SiO2 surface modification on the filler‐reinforced interfaces in SiO2‐filled functional styrene butadiene rubber composites

“…It can be seen from Figure 10 that the loss factor tan δ of various SSBR/SiO 2 composites increases with the increase of shear strain ε. As reported, the larger the relative distance between molecules, the higher the internal friction and the larger the loss factor 51 . The tan δ values of composites that contain surface modifiers or functional groups are significantly lower than GSSBR/SiO 2 @Pure, indicating that SBR filled with unmodified silica is more prone to slip than modified by Si69 or PEG under the same strain scanning conditions 44,52 .…”