The accumulation channel driven bipolar transistor (ACBT): a new MOS-gated semiconductor power device

Thapar, N.; Baliga, B. Jayant

doi:10.1109/ispsd.1997.601472

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…An interesting concept, the accumulation channel driven bipolar transistor (ACBT) in which the p base was totally eliminated and hence the channel resistance reduced to zero was proposed and demonstrated experimentally in Thapar and Baliga (1997) (® gure 12). The punch-through in the o -state was prevented by the existence of a second trench with a highly doped p ‡ layer at the bottom (Matsumoto et al 1994, Thapar andBaliga 1997). However the elimination of the p-base has its negative consequences.…”

Section: The Acbtmentioning

confidence: 99%

Silicon MOS controlled bipolar power switching devices using trench technology

Trajković¹,

Udrea²,

Amaratunga³

et al. 1999

International Journal of Electronics

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The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 8 kV) applications. Such devices will be based on utilizing the advantages brought about by trench gate MOSFETs to control bipolar current¯ow. In this paper we give a review of development of trench gate IGBTs and we describe brie¯y new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.

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Section: The Acbtmentioning

confidence: 99%