PACS 68.55.Jk, 78.55.Mb, 78.60.Fi The incorporation of antimony doped tin oxide (SnO 2 :Sb), prepared from the sol gel method, into luminescent porous silicon (PS) layers is investigated. Characterisation of the resulting structures by photoluminescence (PL) is presented. It shows that the recuperated PL signal is important and the solid phase does not degrade the skeleton of PS layer with porosity less than 70%. However, for highly porous layers (80%), it was found that the recuperated PL signal is low and the PS skeleton is strongly degraded. Preliminary characterizations of the electrical properties of the resulting nanocomposite structure are presented. The current -voltage characteristic of the SnO 2 :Sb/PS structure is well fitted at low voltage using the Richardson-Schottky diode equation and taking into account of a series resistance R s . For voltage above 1 V, we show that traps control transport. Electroluminescence (EL) is observed with a threshold at 6 V. All the parameters of the diode are determined and discussed. A diagram of band energy of SnO 2 :Sb/PS/c-Si is proposed.