Excitation process and photoluminescence properties of Tb3+ and Eu3+ ions in SnO2 and in SnO2: Porous silicon hosts

Photoconductivity and photoluminescence in chemically deposited (Cd‐Zn)S:CdCl2,Tb films

“…The increase in emission may be due to increasing concentration of impurity and decrease in emission at higher concentrations may be due to the wellknown phenomena of concentration quenching. Concentration quenching effect has also been reported in Tb doped Tin Oxide layers by Dabboussi et al [23]. It was also found that films prepared at RT showed better emission as compared to that of films prepared at 60°C in WB.…”

Yb3+ effect on the spectroscopic properties of Er–Yb codoped SnO2 thin films

“…The experimental decay curve is well described by a stretched exponential function [30]. The observed lifetime of the 1530 nm emission can be written as 1/t¼W R þW NR , where W R and W NR are the radiative and non-radiative decay rates, respectively.…”

Sensitisation of erbium emission by silicon nanocrystals-doped SnO2

“…Recently, strong efforts have been made to SnO 2 material with active optical properties such as photoluminescence (PL), electroluminescence, or nonlinear optical properties, which may lead to new optoelectronic devices with superior performance [8]. Particularly, there has been a growing interest in luminescence of rare-earth ions-doped SnO 2 , such as SnO 2 :Tb [9], SnO 2 :Eu [10], SnO 2 :Dy [11]. Among rare-earth ions, the Er 3+ ion is of particular interest, because its emission at 1.5 mm ( 4 I 13/2 -4 I 15/2 transitions in the internal 4f-shell) corresponds to minimal loses of silica fibre-based optical communication systems [12].…”