2009
DOI: 10.1016/j.jlumin.2008.07.017
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Sensitisation of erbium emission by silicon nanocrystals-doped SnO2

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Cited by 24 publications
(3 citation statements)
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“…In [15], photoluminescence measurements in thin SnO 2 films at room temperature with excitation at 280 nm show two broad emission peaks (400 and 430 nm). In thin undoped tin dioxide films on silicon substrates in [3], a broad emission peak at 395 nm was observed. The behavior of the peak at 590 nm depending on the diameter of tin dioxide nanowires was investigated in [16].…”
Section: Luminescence In Nanoscale Forms Of Tin Dioxidementioning
confidence: 99%
See 1 more Smart Citation
“…In [15], photoluminescence measurements in thin SnO 2 films at room temperature with excitation at 280 nm show two broad emission peaks (400 and 430 nm). In thin undoped tin dioxide films on silicon substrates in [3], a broad emission peak at 395 nm was observed. The behavior of the peak at 590 nm depending on the diameter of tin dioxide nanowires was investigated in [16].…”
Section: Luminescence In Nanoscale Forms Of Tin Dioxidementioning
confidence: 99%
“…In recent years, studies of the luminescence of various nanoscale forms of pure and doped SnO 2 , as well as composite compounds and heterojunctions using it, have been activated. This interest is due to the promising use of such materials as phosphors [1], in LED applications [2], in solid-state optical amplifiers and tunable lasers [3], etc. Thermoluminescence of tin dioxide doped by Europium [4] is used as a detection phenomenon for dosimetry purposes.…”
Section: Introductionmentioning
confidence: 99%
“…PL performance would be improved further by optimizing the size of Si-NCs by adjusting the Si layers' thickness and the annealing temperature. In order to understand the sensitization properties of Si-NCs, we deduced the absorption cross section of the sensitizers according to the formula: [17] 𝐼…”
mentioning
confidence: 99%