Structural, optical and electrical properties of porous silicon impregnated with SnO ₂ :Sb

Abstract

PACS 68.55.Jk, 78.55.Mb, 78.60.Fi The incorporation of antimony doped tin oxide (SnO 2 :Sb), prepared from the sol gel method, into luminescent porous silicon (PS) layers is investigated. Characterisation of the resulting structures by photoluminescence (PL) is presented. It shows that the recuperated PL signal is important and the solid phase does not degrade the skeleton of PS layer with porosity less than 70%. However, for highly porous layers (80%), it was found that the recuperated PL signal is low and the PS skeleton is strongly degraded. Preliminary characterizations of the electrical properties of the resulting nanocomposite structure are presented. The current -voltage characteristic of the SnO 2 :Sb/PS structure is well fitted at low voltage using the Richardson-Schottky diode equation and taking into account of a series resistance R s . For voltage above 1 V, we show that traps control transport. Electroluminescence (EL) is observed with a threshold at 6 V. All the parameters of the diode are determined and discussed. A diagram of band energy of SnO 2 :Sb/PS/c-Si is proposed.

Electrical properties of individual tin oxide nanowires contacted to platinum electrodes

“…6͒. In our experiments, effective barrier height ͑ BE ͒ was found to be below 0.4 eV, which is significantly lower than the expected theoretical value ͑⌽ B0 = 0.75± 0.10 eV͒ for clean Pt-SnO 2 interfaces, 22 suggesting that tunneling assisted by interface states is not a negligible term in the conduction of reverse-biased junctions. The necessity of accounting for both tunneling and thermionic contributions can be attributed to defects induced by electron bombardment and metal organic precursor decomposition in the contact regions.…”

Electrical performance in iron-passivated porous silicon film

“…6. In the band diagram some used parameters are the same considered by some authors [29,30]: Si = 4.12 eV; PS = 3.69 eV and E Si = 1.12 eV. The work function of Ag is q˚A g = 4.63 [31], E PS is taken equal to 1.71 eV [18] and E PS ≈ E Si + ıE C + ıE V [29,30] where ıE C and ıE V are band-gap offsets of the conduction and the valence bands between c-Si and PS, their ration being ıE V /ıE C = 2.3 [32].…”

“…The work function of Ag is q˚A g = 4.63 [31], E PS is taken equal to 1.71 eV [18] and E PS ≈ E Si + ıE C + ıE V [29,30] where ıE C and ıE V are band-gap offsets of the conduction and the valence bands between c-Si and PS, their ration being ıE V /ıE C = 2.3 [32]. E C denotes the height of the peak in conduction bands in the interface PS/c-Si; [30,31] where ı 1 and ı 2 present the difference between the Fermi level and the valence band in c-Si and PS, respectively; ı 1 = 0.18 eV [33], qV D is the built in potential. From the energy band ıE V = ı 2 − ı 1 .…”

Photoluminescent studies on porous silicon/tin oxide heterostructures

“…In a previous report, the significance of the sol-gel (SG) technique for the growth of Sb-doped (SnO 2 :Sb) or ITO into nanoporous silicon [4] was demonstrated. The formation of SnO 2 :Sb on PSi with different porosities has been recently reported [5], in which the SnO 2 :Sb film has been beneficial in preserving the PL and EL characteristics.…”