Electrical performance in iron-passivated porous silicon film

Rahmani, M.; Moadhen, A.; Zaïbi, M.-A.; Lusson, A.; Elhouichet, Habib; Oueslati, M.

doi:10.1016/j.jallcom.2009.05.127

Cited by 21 publications

(9 citation statements)

References 31 publications

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“…The conjugation of our previous results [13,18] and this work shows that the recombination kinetics in PS/Fe is doing through two levels localized in the PS band gap. Consequently, we attribute B 1 and B 2 to levels in the band gap of PS.…”

Section: Resultssupporting

confidence: 82%

Time-resolved photoluminescence study of stabilised iron–porous silicon nanocomposites

Rahmani¹,

Ajlani²,

Moadhen³

et al. 2010

Journal of Alloys and Compounds

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Section: Resultssupporting

confidence: 82%

Time-resolved photoluminescence study of stabilised iron–porous silicon nanocomposites

Rahmani¹,

Ajlani²,

Moadhen³

et al. 2010

Journal of Alloys and Compounds

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“…In our case, the variation of the barrier heights values may be attributed to the new interfacial layer and to the inhomogeneous distribution of the P3HT molecules on the SiNWs layer surface which is proved by SEM images. There are several models that explain the charge transport mechanism in heterojunction structures such as Fowler-Nordheim tunneling (FNT), Poole-Frenkel (PF) and space charge limited conduction mechanisms (SCLC) [32,33]. The information about charge mechanism can be determined from the curve of I-V characteristics presented in double logarithmic scale (Fig.…”

Section: Influence Of the P3ht Deposition On The Electrical Propertiementioning

confidence: 99%

Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

Rahmani

Meftah

2020

J Mater Sci: Mater Electron

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The electrical properties of Ag/Poly(3-hexylthiophene)/Silicon nanowires heterostructure (Ag/P3HT/SiNWs) were investigated. Silicon nanowires (SiNWs) were obtained by metal-assisted chemical etching method in one-step process. P3HT polymer was deposited on SiNWs surfaces by electroless deposition method for different immersion durations (d im). The morphology of SiNWs before and after deposition of P3HT polymer has been examined by scanning electron microscope (SEM). The formation of nanowires as well as the presence of P3HT on their surfaces can be seen in SEM images. Current-voltage (I-V) measurements were carried out on Ag/P3HT/SiNWs by varying d im from 30 to 210 min. The electrical measurements on the different junctions at room temperature showed a rectifying effect. For 30 min, the ideality factor of the Schottky diode was reduced from 4 to 1,4. By using the Cheung method, the diode parameters of the different structures are determined and discussed. The different hetrostructures have been annealed at 100 °C, 200 and 300 °C. The characteristic parameters were calculated as a function of annealing temperature. The optimum temperature for these heterostructures characteristics is 100 °C. The interface states, the trapping levels and the thermal activation of the free carriers are the main factors involved in the conduction phenomenon through Ag/P3HT/SiNWs heterostructures.

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“…The luminous intensity and efficiency of PS are significantly decreased after a period of storage because of its instability when it is used as a light emitting material, or its surface covered with relatively small holes prompts the reduction of the efficiency adsorption and sensitivity of PS which applied as a sensor. Therefore, in order to solve these problems, PS should be post-processing, such as surface oxidation [13,14], surface passivation [15][16][17][18], ion implantation [19], organic compound [20] and solution erosion [21], and many others [22,23].…”

Section: Introductionmentioning

confidence: 99%

Effect of Post-processing on Photoluminescence and Surface Composition of Porous Silicon

Zhang¹,

Zhao²,

Hua³

et al. 2014

Proceedings of the 2015 International Conference on Material Science and Applications

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Abstract. Porous silicon (PS) with 6.13 nm average pore diameter, 20.6μm thickness layer and 70.8% porosity prepared by galvanostatic electrochemical anodisation of p-type silicon wafer in aqueous hydrofluoric acid (HF)/ethanol electrolyte. The freshly prepared PS was processed by time effect, nitric acid treatment, cathodic reduction, and hydrogen peroxide treatment, respectively. Samples were characterized and analyzed by field emission scanning electron microscopy (FESEM), Photolumimescence (PL) and X-ray photoelectron spectroscopy (XPS) before and after post-processing. The PL spectra showed that PS had three PL peaks near to 425 nm, 486 nm and 530 nm, respectively, the strongest luminous intensity at 425nm obtained when PS followed 6h in hydrogen peroxide post-processing, and the difference effect on PL via various post-processing were also discussed. From XPS spectra analysis, the surface composition of PS via different post-processing method was carried out that the oxygen mainly existed in the form of Si-O.

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Electrical performance in iron-passivated porous silicon film

Cited by 21 publications

References 31 publications

Time-resolved photoluminescence study of stabilised iron–porous silicon nanocomposites

Time-resolved photoluminescence study of stabilised iron–porous silicon nanocomposites

Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

Effect of Post-processing on Photoluminescence and Surface Composition of Porous Silicon

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