Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

Wang, Jian Tao; Shi, Xiaojun; Zhong, Xinhua; Wang, Jiannong; Pyrah, Leo; Sanderson, Kevin D.; Ramsey, Philip M.; Hirata, Masahiro; Tsuri, Keiko

doi:10.1016/j.solmat.2014.09.043

Cited by 31 publications

(22 citation statements)

References 40 publications

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“…Different growth rates seem to have little effect on the root mean square (RMS) roughness of films deposited using the higher dopant concentration, only varying by ±2 nm. However, deposition at the lower dopant concentration level showed a small, but real decrease in roughness with decreased growth rate, as previously observed by us ( Figure 6) [25]. At high H 2 O concentration, films in general are slightly smoother, i.e., have low RMS values and are in-line with previous reported observations [10].…”

Section: Resultssupporting

confidence: 91%

“…Samples S7-S9 with different speeds having 0.6 M TFAA and 1:30 Sn/H2O ratio but with different speeds were significantly less resistive and showed p ranging between 6.65 × 10 −4 and 7.53 × 10 −4 Ω·cm. This may be a result of effective substitution of O2 − by F − in the SnO2 lattice [25]. Almost no difference in µ is found, but N marginally decreased from 4.70 × 10 20 to 3.9 × 10 20 cm −3 .…”

Section: Resultsmentioning

confidence: 88%

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Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

2016

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Abstract:In this work, the impact of translation rates in fluorine doped tin oxide (FTO) thin films using atmospheric pressure chemical vapour deposition (APCVD) were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200) plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200) preferred orientation. For low dopant concentration levels, atomic force microscope (AFM) studies showed a reduction in roughness (and lower optical haze) with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

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Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 88%

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

2016

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“…This morphology is typical as a result of the deposition process of the FTO layer [52,53]. Similarly, Figure 1 shows representative AFM images of substrate A ((c), FTO on glass as purchased), and of substrate B ((d), FTO chemically textured on glass).…”

Section: Resultsmentioning

confidence: 77%

“…However, some works demonstrated that specific intentional patterning of substrate Affects the spatial distribution and size of the NPs formed by the dewetting process of a deposited film [48][49][50][51]. The FTO layer that we use as substrate is un-intentionally patterned since it is formed by FTO pyramids randomly distributed on the glass slide as result of the deposition process of the same FTO layer [52,53], namely substrate A. We characterized the topography of this substrate by measuring its roughness and mean distance between nearest-neighbor pyramids.…”

Section: Introductionmentioning

confidence: 99%

Experimental Analysis on the Molten-Phase Dewetting Characteristics of AuPd Alloy Films on Topographically-Structured Substrates

Ruffino¹

2017

Metals

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AuPd nanoparticles are formed on fluorine-doped tin oxide (FTO) by a nanosecond laser irradiation-induced dewetting process of deposited AuPd films. In particular, we analyze the effect of the surface topography of the substrate on the dewetting process and, so, on the final mean size of the formed nanoparticles. In fact, we used two supporting FTO substrates differing in the surface topography: we used a FTO layer which is un-intentionally patterned since it is formed by FTO pyramids randomly distributed on the glass slide as result of the deposition process of the same FTO layer, namely substrate A. We used, also, a further FTO substrate, namely substrate B, presenting, as a result of a chemical etching process, a higher roughness and higher mean distance between nearest-neighbor pyramids with respect to substrate A. The results concerning the size of the obtained AuPd NPs by the laser irradiations with the laser fluence fixed shows that the substrate topography impacts on the dewetting process. In particular, we found that below a critical thickness of the deposited AuPd film, the NPs formed on substrates A and B have similar size and a similar trend for the evolution of their size versus the film thickness (i.e., the dewetting process is not influenced by the substrate topography since the film does not interact with the substrate topography). On the other hand, however, above a critical thickness of the deposited AuPd film, the AuPd NPs show a higher mean size (versus the film thickness) on substrate B than on substrate A, indicating that the AuPd film interacts with the substrate topography during the dewetting process. These results are quantified and discussed by the description of the substrate topography effect on the excess of chemical potential driving the dewetting process.

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“…Traditionally, tin oxide is doped to improve its expected properties by some dopants such as indium [17,18], antimony [19], palladium [20], cobalt [21] and fluorine. Depositing fluorine doped tin oxide thin films is usually done by spray pyrolysis [22], sputtering [23], sol-gel [24], and chemical vapor deposition (CVD), which in turn includes different variations such as low pressure CVD [25], plasma enhanced CVD [26], and atmospheric pressure chemical vapor deposition (AP-CVD) which is very productive and economic [27,28].…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Properties of SnO₂:F Thin Films Prepared by Chemical Vapor Deposition Method

Najafi

Rozati

2017

Acta Phys. Pol. A

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Fluorine doped tin oxide (FTO) thin films were deposited onto glass substrate at different substrate temperatures by a simple and inexpensive method of air pressure chemical vapor deposition. The substrate temperature was kept constant at about 500• C as the optimum temperature, and air was used as both a carrier gas and the oxidizing agent. A very simple method of characterization were carried on to investigate the electrical and structural properties of the prepared thin films. The electrical parameters variations showed that these parameters vary with substrate temperature ranging from an insulator thin film to a highly conductive layer. X-ray diffraction also revealed the structure to be polycrystalline at higher temperatures compared to amorphous structure for lower temperatures.

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Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

Cited by 31 publications

References 40 publications

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

Experimental Analysis on the Molten-Phase Dewetting Characteristics of AuPd Alloy Films on Topographically-Structured Substrates

Structural and Electrical Properties of SnO₂:F Thin Films Prepared by Chemical Vapor Deposition Method

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Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

Cited by 31 publications

References 40 publications

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

Experimental Analysis on the Molten-Phase Dewetting Characteristics of AuPd Alloy Films on Topographically-Structured Substrates

Structural and Electrical Properties of SnO2:F Thin Films Prepared by Chemical Vapor Deposition Method

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Structural and Electrical Properties of SnO₂:F Thin Films Prepared by Chemical Vapor Deposition Method