Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

Abstract

Abstract:In this work, the impact of translation rates in fluorine doped tin oxide (FTO) thin films using atmospheric pressure chemical vapour deposition (APCVD) were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200) plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200) preferred orientation. For low dopant concentration levels, atomic force microscope (AFM) studies showed a reduction in roughness (and lower optical haze) with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

Environmentally Friendly Plasma-Treated PEDOT:PSS as Electrodes for ITO-Free Perovskite Solar Cells

“…Widely used transparent electrode materials include indium tin oxide (ITO), indium zinc oxide (IZO), and fluorine tin oxide (FTO). However, these TEs possess certain drawbacks in the context of solution processed photovoltaics, such as high deposition cost, incorporation of scarce and expensive indium in ITO and IZO, brittle nature of ITO and FTO, , and high surface roughness of FTO . Therefore, low cost, environmentally friendly, and solution processable TEs are needed for solution processed solar cells.…”

Progression towards high efficiency perovskite solar cells via optimisation of the front electrode and blocking layer

“…The FTO growth is columnar 26 and polycrystalline. 27 As different crystallographic orientations grow at a different rate the differences are accentuated as the film gets thicker, so increasing the surface roughness. A thinner sample would exhibit increased sheet resistance, unless the dopant levels were increased to reduce bulk resistivity which may risk performance loss due to increased free carrier absorption.…”

Modification of the Physical Properties of SnO2 Thin Films for Optoelectronic Applications Combining Rapid Atmospheric Pressure Chemical Vapor Deposition Technique and Heat Treatment

“…preferred orientation for SnO 2 -based films, [51] and it was recently claimed that the films with a preferred orientation along the (200) axis are highly desired as they yield improved electrical conductivities. [52] Table 1 indicates several structural properties of tin oxide thin films calculated as follows. Applying the Scherrer equation [53] :…”

“…(200) is the most frequently reported preferred orientation for SnO 2 ‐based films, [ 51 ] and it was recently claimed that the films with a preferred orientation along the (200) axis are highly desired as they yield improved electrical conductivities. [ 52 ]…”