Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching

Sabataityt, J.; Šimkien, I.; Bendorius, R. A.; Grigoras, K.; Jasutis, V.; Pačebutas, V.; Tvardauskas, H.; Naudžius, K.

doi:10.1016/s0928-4931(01)00475-1

Cited by 43 publications

(20 citation statements)

References 11 publications

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“…The compositions of the porous samples are analyzed with energy dispersive X-rays (EDAX) for the atomic percentage of Ga and As in GaAs which are 46.91 and 53.09 % respectively. The EDAX analysis is compared with the already reported chemical composition of porous GaAs layers [8,11]. Photoluminescence (PL) emission spectra of porous samples 1 to 3 are recorded at room temperature using a spectroflurophotometer (Shimadzu RF-5000).…”

Section: Methodsmentioning

confidence: 99%

“…Such works on the compound semiconductors GaP [2][3], SiGe [4] and SiC [5] are now available in literature. Since GaAs is widely used in optoelectronic devices [6], being a direct band gap semiconductor, works on porous GaAs started appearing for various doping densities [7] and electrolytes [8].…”

Section: Introductionmentioning

confidence: 99%

“…Sabataityte et al [8] prepared porous GaAs by electrochemical etching in a solution of different concentrations and for various etching periods (15 and 30 min) at a constant current density. They investigated the porous layers using SEM, TEM and optical method and showed that the porous layer consists of Ga 2 O 3 , As 2 O 3 , As 2 O 5 and GaAs and the observed PL spectra consist of "infrared" and "green" spectral structures.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and thermal diffusion of nanostructured porous GaAs

Srinivasan¹,

Ramachandran

2008

Cryst. Res. Technol.

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Nanostructured porous GaAs samples were prepared by electrochemical anodic dissolution of GaAs for various current densities and etching periods. The samples are characterized by SEM and photoluminescence (PL) where a blue shift is observed in PL. Thermal properties of this nanostructured GaAs are then studied by photoacoustic (PA) spectroscopy, where one order decrease in thermal conductivity of porous GaAs compared to bulk is observed. Further it is shown that the thermal conductivity of porous GaAs decreases with decrease in size of the particles.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Synthesis and thermal diffusion of nanostructured porous GaAs

Srinivasan¹,

Ramachandran

2008

Cryst. Res. Technol.

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“…Formation of pores during anodization process has been widely reported for various types of crystalline silicon. The compound semiconductors such as GaAs [4], GaN [5], SiN [6], InP [7,8], and GaP [9][10][11] have also been investigated in the form of porous layers and many different properties relative to the corresponding bulk materials have been revealed. For instance, a photoluminescence emission was observed [7] at 2.2 eV in InP dots of size around 2 nm prepared by colloidal chemistry.…”

Section: Introductionmentioning

confidence: 99%

“…It was found [8] that the amount of the blueshifted energy depended * corresponding author; e-mail: irena@pfi.lt on the microstructure of porous InP. From the theoretical [12] and experimental [4] studies it followed that the nanocrystalline structures of direct band gap semiconductors like GaAs possessed even higher-energy luminescence in a visible wavelength region.…”

Section: Introductionmentioning

confidence: 99%

Formation of Porous n-A₃B₅Compounds

et al. 2008

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Porous layers of A3B5 compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area (1.5×1.5 cm 2 ) porous layers of uniform porosity were produced by anodization process of n-type A 3 B 5 semiconductors, GaAs, InP, and GaP.

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Investigation of porous GaAs layers formed on n⁺‐type GaAs by electrochemical anodization in HF solution

Béji

Sfaxi

BenOuada

et al. 2004

Physica Status Solidi (a)

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The electrochemical etching of n+‐type GaAs in a hydrofluoric acid (HF) solution results in the formation of a porous layer. The current–potential characteristic I(V) of the n+‐type GaAs–HF electrolyte interface shows that pore formation started at a breakdown anodic potential of about 2.5 V independent of the HF concentration. In addition, it is also shown that an electropolishing of the semiconductor started over a critical anodic potential value. The morphology and photoluminescence (PL) of the porous samples were investigated. It has been shown that the porous layer surface morphology consists of arbitrarily shaped crystallites, the pores grow deeply in the substrate and, under some electrochemical conditions, etch pits can be formed. The porous layers exhibited an intense and broad PL band, compared to that of the starting GaAs, composed of elementary bands located below and above the band gap of the starting GaAs. The elementary bands located above the band gap were attributed to GaAs nanocrystals. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching

Cited by 43 publications

References 11 publications

Synthesis and thermal diffusion of nanostructured porous GaAs

Synthesis and thermal diffusion of nanostructured porous GaAs

Formation of Porous n-A₃B₅Compounds

Investigation of porous GaAs layers formed on n⁺‐type GaAs by electrochemical anodization in HF solution

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Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching

Cited by 43 publications

References 11 publications

Synthesis and thermal diffusion of nanostructured porous GaAs

Synthesis and thermal diffusion of nanostructured porous GaAs

Formation of Porous n-A3B5Compounds

Investigation of porous GaAs layers formed on n+‐type GaAs by electrochemical anodization in HF solution

Contact Info

Product

Resources

About

Formation of Porous n-A₃B₅Compounds

Investigation of porous GaAs layers formed on n⁺‐type GaAs by electrochemical anodization in HF solution