Synthesis and thermal diffusion of nanostructured porous GaAs

Abstract

Nanostructured porous GaAs samples were prepared by electrochemical anodic dissolution of GaAs for various current densities and etching periods. The samples are characterized by SEM and photoluminescence (PL) where a blue shift is observed in PL. Thermal properties of this nanostructured GaAs are then studied by photoacoustic (PA) spectroscopy, where one order decrease in thermal conductivity of porous GaAs compared to bulk is observed. Further it is shown that the thermal conductivity of porous GaAs decreases with decrease in size of the particles.

Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

“…The formation of porous GaAs has been reported in the literature mainly from the chemical based methods which involve electrolysis and etching to form porous GaAs [ 49 , 50 , 51 , 52 , 53 , 54 ]. To the best of our knowledge, the formation of porous GaAs using physical or plasma based methods without any etching or electrolysis has not been reported yet.…”