Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

Abstract

The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III–V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III–V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well.

Monoclinic Zirconium Oxide Nanostructures Having Tunable Band Gap Synthesized under Extremely Non-Equilibrium Plasma Conditions

“…Two bursts of focused plasma were used for the deposition of ZrO2 nanostructures. The process of formation of a high temperature, high density, and extremely nonequilibrium argon plasma on the top of an anode along with the modifications to the DPF device for nanofabrication have been reported in earlier literature [22,23]. The focused argon plasma formed at the top of modified anode ablates ZrO2 pellet and ablated material ions move vertically upward in a fountain-like structure and are deposited on quartz substrates.…”

On the representation of dense plasma focus as a circuit element

“…The dense plasma focus (DPF) [1,2,3] is well-known for being a prolific source of neutrons [4], fast ions [5], electrons [6] and soft x-rays [6] as well as a uniquely useful plasma environment [6]. Applications of the dense plasma focus in materials science [7], nanotechnology [8,9], biomedicine [10], production of short-lived radioisotopes for medical imaging [11] have been discussed in literature. Another potential application that has received attention is space propulsion.…”

Effect of Atomic Number on Plasma Pinch Properties and Radiative Emissions

“…The study of the dynamics of the plasma focus covered the formation and acceleration of the plasma layer inside the device [3] and the factors affecting such as the sheath current [4], pinch current [5], length of the insulator used to separate the anode and the cathode, the type of gas used within the device [6,7], the parameters of the capacitor bank [8] and electrode engineering, and ion beam properties produced in dense plasma focus devices using various gases [9]. Due to the collapse of the plasma pinch after a short period of time (several ns) of its formation and emitting ions and electrons in opposite directions, many studies have been conducted that dealt with the possibility of benefiting from the emitted particle beams such as lithography [10,11] and short-lived radioisotope produc-tion [12][13][14][15] thin film deposition [16,17]. The soft X-ray emission from dense plasma focus is according to two mechanisms: linear radiation and continuum radiation (recombination and Bremsstrahlung radiation) [18][19][20].…”