Porous layers of A3B5 compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area (1.5×1.5 cm 2 ) porous layers of uniform porosity were produced by anodization process of n-type A 3 B 5 semiconductors, GaAs, InP, and GaP.
Porous silica layers on Si substrates were produced by sol-gel spin-on technique. The structural studies and ellipsometric measurements have been carried out in order to investigate the dependence of silica properties on growth technology and thermal annealing. The dense SiO2 layers from acid tetraethoxysilane-based precursors and the layers of increased porosity obtained from precursors containing surfactant cethyltrimethylammonia bromide were investigated. The hybrid type Fe-doped silica layers were also produced and studied. The provided investigations have shown that the method used is perspective for fabrication of porous silica layers and for obtaining hybrid samples.
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