Formation of Porous n-A₃B₅Compounds

Abstract

Porous layers of A3B5 compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area (1.5×1.5 cm 2 ) porous layers of uniform porosity were produced by anodization process of n-type A 3 B 5 semiconductors, GaAs, InP, and GaP.

Structural and Optical Properties of Porous III-V Semiconductors GaAs, InP Prepared by Electrochemical Etching

“…In particular, the top layer of GaAs sample primarily consists of As 2 O 3 , Ga 2 O 3 and GaAs nanocrystals (see, for example [1][2][3][4]). The bottom layer with pores of different sizes depending on the substrate resistance and etching conditions (current, duration of anodization) was formed on the surface of the monocrystalline substrate.…”

“…The bottom layer with pores of different sizes depending on the substrate resistance and etching conditions (current, duration of anodization) was formed on the surface of the monocrystalline substrate. The surface morphology strongly depends on the current density and illumination during the etching procedure [4]. The two-layer structure of porous InP contains native oxides and reaction products.…”

Synthesis and microstructure of p-type porous gallium phosphide layers

“…The first reports on por-GaP obtaining and characterization are referred since 1990s [11][12][13][14]. One of the most effective ways of obtaining porous structure from the A III В V materials is electrochemical etching [15][16][17]. The advantages of the method are good process controllability and relative cheapness.…”

Effect of etching conditions on the formation of a regular porous structure of A3B5 semiconductors

“…Различные методы для самоорганизованного формирования наноструктур интенсивно развиваются ввиду использования данных структур для электронных устройств, фотонных устройств, химических и биохимических датчи ков [1,2] и т.д В полупроводниках А3В5 типа для формирования наноструктур применяют тради ционно довольно дорогой метод молекулярно лучевой эпитаксии или металло-органическую эпитаксию с газовой фазой (MOVPE). Возмож ная альтернатива этим методамиспользова ние электрохимических процессов по аналогии с получением пористого кремния [3] На рис. 1. изображены сколы рог-1пР, полу--енного при разных плотностях тока.…”