Morphological instability of NiSi1−uGeu on single-crystal and polycrystalline Si1−xGex

Abstract

Thermal exfoliation and crystallographic transformation of single-crystal metal oxides induced by He-ion implantation J. Appl. Phys. 94, 3045 (2003); 10.1063/1.1600525 Morphological and phase stability of nickel-germanosilicide on Si 1−x Ge x under thermal stress

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

“…Moreover, different phase with different work function can be obtained depending on the nickel Silicides stoichiometry [265], which is desirable for the realization of both nMOS and pMOS devices. Nickel monosilicide (NiSi) is the desired low resistivity phase (11)(12)(13)(14)(15) lX cm), which is formed at temperature below 500°C allowing for a lower thermal budgets [315,316]. While at higher temperatures above 750°C, NiSi 2 with higher resistivity of $40 lX cm is formed [291], caused by silicon agglomeration.…”

CESL-Stressor-Induced Morphological Instability of Pt-Dissolved Ni Germanosilicide Formed on Silicon Germanium Epilayer

“…The tensile CESL can significantly increase the R S of the NiSi 1−x Ge x films, but the compressive stressor only shows a slight effect on the R S change. This indicates that the thermal stability of the NiSi 1−x Ge x may be reduced to below 400 • C by the tensile stressor, which is much lower than the without-CESL endurance of 550 • C-600 • C [2]. As is well known, the thermal degradation of NiSi can be connected to grain agglomeration and phase transformation.…”

“…A major concern with NiSi 1−x Ge x is the poor thermal stability. NiSi 1−x Ge x starts to agglomerate at 550 • C-600 • C [2], [4], and alloying of high-melting-point metals such as Pt [1], [5] has been shown to maintain the smooth morphology up to 700 • C.…”

“…N ICKEL-BASED self-aligned silicides (salicides) formed on silicon germanium (Si 1−x Ge x ) have attracted a growing interest for contact metallization in the current deepsubmicrometer integrated circuits (ICs) [1], [2]. As the dimensions of advanced MOSFETs are continuously scaled down, application of Si 1−x Ge x source and drain stressors is known to enhance the performance of the p-channel by strain engineering technique [1], [3].…”

Moore’s Law for Photonics and Electronics

“…A second RTA is then required to transform the high-resistivity phase into the required low-resistivity phase [34].…”