Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFET's

Small-Signal Characterization of FET/HEMT for Terahertz Applications

“…Following Ref. [4] we shall put l, m = 1 for the gate and l, m = 2 for the drain, respectively. Since we are interested mainly in 2D-plasma-wave effects originating from carrier propagation along the channel the ac behavior of the drain current (voltage) response to the ac small-signal voltage (current) perturbation at the drain contact is of the most importance.…”

“…To obtain small-signal spectra of these quantities we are using the Fourier transform of transient response of drain current (or voltage) to voltage (or current) step perturbation at the drain terminal (see, e.g. [4] for more details).…”

Complete Monte Carlo RF analysis of "real" short-channel compound FET's

“…The straight-forward use of the Gauss' law for calculating the displacement current also leads to significant current oscillations. The transient terminal currents can be statistically enhanced by employing more particles [12], [13].…”

“…The estimated source and drain resistances and are subtracted from to obtain the -parameters of the "intrinsic" device equivalent circuit surrounded by dashed lines in Fig. 2 (6) where (7) Finally, are transformed back into -parameters from which the components of the "intrinsic" small-signal circuit can be analytically extracted [12].…”

“…Although the fundamentals of the RF and noise EMC analysis are outlined in [11], very few Monte Carlo compound FET simulation papers address the RF performance issues in depth. In [12], a strategy for extracting the -parameters and the small-signal equivalent circuit components from Monte Carlo simulation of GaAs MESFET's was presented. However, this analysis is restricted to simple rectilinear device geometries and low voltages and does not take into account the "intrinsic" source and drain series resistances presented in the simulations nor the "extrinsic" contact and gate resistances presented in a real device.…”