Complete Monte Carlo RF analysis of "real" short-channel compound FET's

Babiker, S.; Asenov, A.; Cameron, N.; Beaumont, S. P.; Barker, John R.

doi:10.1109/16.704358

Cited by 53 publications

(23 citation statements)

References 26 publications

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“…The method simulating dynamic behavior of the SB-MOSFET by EMC is similar to the one described in Refs. [19,20]. The small-signal equivalent circuit (SSEC) for SB-MOSFETs is the same as the conventional SOI MOSFET.…”

Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

Liu

Han

2011

Sci. China Inf. Sci.

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The high frequency performances of nano-scale ultra-thin-body (UTB) Schottky-barrier nMOSFETs (SB-nMOSFETs) are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devices offer excellent RF performance with high values of f T and fmax. The significant dependence of f T and fmax on gate voltage and weak dependence on barrier height are demonstrated. Meanwhile, the significant dependence of gm and g ds on both gate voltage and SB height are shown. Moreover, the scalability of f T is outstanding and close to the ideal case (f T ∝ 1/L 2 g ). The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances Cgs, C gd and C ds . At ballistic transport limit the f T and fmax are almost 10 times larger. The Scattering effects in nano-scale SB-nMOSFETs cannot be neglected.Keywords Monte Carlo, ultra thin body (UTB), Schottky-barrier MOSFETs (SB-MOSFETs), high frequency CitationDu G, Liu X Y, Han R Q. High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs.

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Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

Liu

Han

2011

Sci. China Inf. Sci.

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“…The instantaneous terminal currents are calculated on the basis of the Ramo-Shockley theorem which has been proved to be correct for time-varying electrode potentials [8]. The technique described by Babiker et al is used here [9]. The noise and RF analysis is performed as follows.…”

Section: Model and Simulated Devicesmentioning

confidence: 99%

“…First, the spectral densities of current fluctuations are extracted from instantaneous terminal currents computed for 250 ps in steady-state regime. Second, the response to a step voltage successively applied to V GS and V DS is analyzed to extract Y ij (ω) parameters by Fourier decomposition of transient currents [9]. The equivalent circuit components may be then deduced together with the noise parameters as the noise figure NF.…”

Section: Model and Simulated Devicesmentioning

confidence: 99%

Thermal noise in nanometric DG-MOSFET

Dollfus¹,

Bournel²,

Galdin‐Retailleau³

et al. 2006

J Comput Electron

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The noise performance of double-gated (DG) and single-gated (SG) MOSFETs is compared. We observe a significant improvement of the noise figure (NF) in the DG structure, which is explained in terms of a favorable increase of cross-correlation between the drain and gate currents. Finally, we showed that the presence of a residual P-type impurity in the channel of a DG structure induces noticeable changes in the spectral density of the gate current fluctuations that is reflected on the noise figure.

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“…The RF analysis is carried out using transient Monte Carlo simulations [9]. For a given operating point the steadystate condition is first established.…”

Section: Methodology and Device Architecturementioning

confidence: 99%

“…H2F takes into account the effects related to the geometry of the gate and recess region and surface effects. The characteristics of the simulated devices are investigated using the Monte Carlo RF analysis technique described in [9]. A methodology has been developed to include the effect of the parasitic series resistances introduced by the contacts and the connection pads on the dc device characteristics [lo].…”

Section: Methodology and Device Architecturementioning

confidence: 99%

Strain engineered In/sub x/Ga/sub 1-x/As channel pHEMTs on virtual substrates: a simulation study

Babiker

Asenov²,

Roy³

et al.

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

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The impact of InXA11-,As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor (pHEMT) is investigated. It is shown that relaxed and tensile strained channel devices outperform the conventional compressively strained channel devices. It is argued that strain engineering in GaAs based devices makes it possible to realise RF characteristics comparable to InP based pHEMTs while obtaining improved breakdown characteristics.

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Complete Monte Carlo RF analysis of "real" short-channel compound FET's

Abstract: Abstract-

Cited by 53 publications

References 26 publications

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

Thermal noise in nanometric DG-MOSFET

Strain engineered In/sub x/Ga/sub 1-x/As channel pHEMTs on virtual substrates: a simulation study

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