Small-Signal Characterization of FET/HEMT for Terahertz Applications

Starikov, E.; Shiktorov, P.; Gruz̆inskis, V.; Marinchio, H.; Nouvel, P.; Torres, J.; Palermo, C.; Chusseau, Laurent; Varani, L.; Ziadé, P.

doi:10.12693/aphyspola.119.203

Cited by 3 publications

(1 citation statement)

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“…2a curves x i = 13 and 38 nm) stimulates weakly the different modes; • The 20 THz resonance is strongly stimulated by an excitation positioned in the drain region (x i = 263 and 288 nm); indeed, a 3D plasma oscillation appears here, due to the long-range interaction of the Coulomb forces leading to mutual oscillations of the blocks of electrons with different carrier concentrations n and n + [9]; the oscillation occurring in the source region is not visible at the drain since this long-range interaction is suppressed by the gated region; • The perturbations located in the n central region induce strong resonances at f = 2 and 6 THz; they result from the excitation of 2D plasma modes of free-carrier oscillations in the gated and ungated parts of the channel; these oscillations describe various spatial modes appearing during the recharge of the distributed capacitance between the gate and channel [10], [11]. On can also remark that a perturbation applied around the middle of the channel (x i = 138 and 163 nm) excites weakly the fundamental mode but strongly the second one.…”

Section: Local Spectral Densitiesmentioning

confidence: 99%

Terahertz detection and electronic noise in field-effect transistors

Mahi

Belghachi

Marinchio

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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High electron-mobility transistors can be used as efficient detectors of an incident THz radiation on its metallic electrodes. This detection can become strongly resonant if the frequency of the THz radiation coincides with plasma eigenfrequencies of the transistor channel. By using a hydrodynamic model we investigate in parallel the transistor intrinsic highfrequency current noise spectrum and its harmonic and average current responses to a voltage perturbation at the electrodes. In both cases we discuss the appearance of resonances associated with the excitation of 2D and 3D plasma modes and, to get an additional physical insight into the properties of the different parts of the transistor, we compute also the local noise spectra originated by electron velocity perturbations distributed in the channel. We demonstrate that the main resonances in the drain current noise spectrum are the same as those observed in the current response to an external THz excitation thus confirming the strong link existing between these two quantities.

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Section: Local Spectral Densitiesmentioning

confidence: 99%

Terahertz detection and electronic noise in field-effect transistors

Mahi

Belghachi

Marinchio

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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Plasmonic Diodes THz Response to Impulse Train and Stochastic Optical Excitations

et al. 2015

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Terahertz (THz) plasma oscillation in n+nn+ InGaAs vertical diodes is studied by using a numerical approach based on the hydrodynamic (HD) equations. The 1D HD model is coupled to 1D Poisson equation. We simulate the diode response to the optical excitation of plasma waves at room temperature. Our results clearly show the presence of 3D plasma resonances in the THz frequency domain. The selection of appropriately shaped optical excitation pulses helps in the realization of the detected frequency. The investigation is completed by introducing stochastic perturbations according to the Langevin equation.

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