A Monte Carlo simulation of electron transport in In 0.53 Ga 0.47 As and InAs is performed in order to extract the main kinetic parameters: mean valley population, effective mass, drift velocity, mean energy, ohmic and differential mobility. Most of these quantities are crucial for the development of macroscopic numerical models. Moreover, for some calculated quantities, analytical interpolation equations are given in order to achieve easy implementation in numerical codes. A comparison between our Monte Carlo calculation and several experimental and theoretical calculations is also carried out in order to validate the results.

The present work prepared the CuIn 3 Se 5 ingots by using a horizontal Bridgman method and investigated the Energy Dispersive Spectrometry (EDS) and X-Ray Diffraction (XRD) to calculate the compositions of the ingots. Photoluminescence was used to check their optical properties. It was found that CuIn 3 Se 5 had either a Stanite structure, an Ordered Defect Chalcopyrite (ODC) structure, or an Ordered Vacancy Chalcopyrite (OVC) structure. The gap energy obtained by Photoluminescence (PL) for the different samples is 1.23 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type.

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Terahertz (THz) plasma oscillation in n+nn+  InGaAs vertical diodes is studied by using a numerical approach based on the hydrodynamic (HD) equations. The 1D HD model is coupled to 1D Poisson equation. We simulate the diode response to the optical excitation of plasma waves at room temperature. Our results clearly show the presence of 3D plasma resonances in the THz frequency domain. The selection of appropriately shaped optical excitation pulses helps in the realization of the detected frequency. The investigation is completed by introducing stochastic perturbations according to the Langevin equation.

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