Review of electron transport properties in bulk InGaAs and InAs at room temperature

Abstract

A Monte Carlo simulation of electron transport in In 0.53 Ga 0.47 As and InAs is performed in order to extract the main kinetic parameters: mean valley population, effective mass, drift velocity, mean energy, ohmic and differential mobility. Most of these quantities are crucial for the development of macroscopic numerical models. Moreover, for some calculated quantities, analytical interpolation equations are given in order to achieve easy implementation in numerical codes. A comparison between our Monte Carlo calculation and several experimental and theoretical calculations is also carried out in order to validate the results.

An accurate analytical model for nonequilibrium drift-velocity and chord-mobility of In0.53Ga0.47As

“…Our MC results are also in good agreement with the simulations of Bude and Hess [3,27]. More details about the MC model can be found in [3] and references therein.…”

“…The input parameters of the MC simulations have been adjusted to fit the experimental data of Pearsall [26]. Our MC results are also in good agreement with the simulations of Bude and Hess [3,27]. More details about the MC model can be found in [3] and references therein.…”

“…The MC simulated data have been compared with the experimental and theoretical data so as to confirm their accuracy and reliability [3,[28][29][30][31][32][33][34][35][36][37][38][39]. As expected, for low electric fields in both cases the drift velocity increases linearly.…”

“…The attempt to model the velocity of electrons with an analytic expression associated with Eqs. (3) and (4) in [3] does not provide a sufficiently accurate fit. Indeed, the two branches of the piecewise function defined in [3] are not continuous at the common point represented by the threshold field E p .…”

“…The task which brings together all those microscopic events into a macroscopic mobility model demands a kinetic approach with a rather heavy computational burden. In this way a validated [3] Monte Carlo simulator (MC) was used to calculate a set of data of the charge carrier velocity and chord-mobility for In 0.53 Ga 0.47 As. In general, mobilities are functions of the electric field, lattice temperature and doping concentration, but since most devices operate at room temperature the data considered here are exclusively functions of the electric field and doping concentration.…”