Monte Carlo analysis of dynamic characteristics and high‐frequency noise performances of nanoscale double‐gate MOSFETs

Abstract

In this paper, a full-band Monte Carlo simulator is employed to study the dynamic characteristics and highfrequency noise performances of a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) with 30 nm gate length. Admittance parameters (Y parameters) are calculated to characterize the dynamic response of the device. The noise behaviors of the simulated structure are studied on the basis of the spectral densities of the instantaneous current fluctuations at the drain and gate terminals, together with their cross-correlation. Then the normalized noise parameters (P, R, and C), minimum noise figure (NF min ), and so on are employed to evaluate the noise performances. To show the outstanding radio-frequency performances of the DG MOSFET, a single-gate silicon-on-insulator MOSFET with the same gate length is also studied for comparison. The results show that the DG structure provides better dynamic characteristics and superior highfrequency noise performances, owing to its inherent short-channel effect immunity, better gate control ability, and lower channel noise.

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A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

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Potential‐based threshold voltage and subthreshold swing models for junctionless double‐gate metal‐oxide‐semiconductor field‐effect transistor with dual‐material gate

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