MONOS memory in sequential laterally solidified low-temperature poly-Si TFTs

Hsieh, Szu-I; Chen, Hung-Tse; Chen, Yu‐Cheng; Chen, Chi‐Lin; King, Ya‐Chin

doi:10.1109/led.2006.871538

Cited by 37 publications

(16 citation statements)

References 6 publications

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“…Many different kinds of one-time programmable (OTP) structure and program mechanism have been studied and reported, 2) such as fuse, [3][4][5][6][7][8][9][10] anti-fuse, [11][12][13][14][15][16][17][18][19] and charge storage [20][21][22][23][24][25] memory. For the fuse structures, we need a power-consuming program current to create electron migration on metal or poly-silicide lines during data programming.…”

Section: Introductionmentioning

confidence: 99%

A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications

Chen¹,

Yuan²,

Peng³

et al. 2016

Jpn. J. Appl. Phys.

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A fully CMOS compatible one-time programmable (OTP) cell with a novel intra-fin cell isolation (IFCI) structure on a FinFET CMOS process has been proposed. The IFCI OTP cell utilizes the field-enhanced dielectric breakdown at fin corners to perform a fast and low-voltage program operation. Moreover, an ultrasmall intra-fin cell-to-cell isolation is firstly introduced to markedly shrink the cell size by eliminating the area-consuming spacing of fin-to-fin isolation. The IFCI FinFET OTP with fast program speed, excellent read disturb immunity, and reliable data retention is a promising solution for logic nonvolatile memory (NVM) technology in advanced CMOS nodes.

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Section: Introductionmentioning

confidence: 99%

A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications

Chen¹,

Yuan²,

Peng³

et al. 2016

Jpn. J. Appl. Phys.

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“…Integrating logic CMOS and NVM within same chip, embedded NVM is very important for long term storage of essential system information and data, especially in portable device. Considering code, secure storage or customized settings, one-time programmable (OTP) memories including anti-fuse, [1][2][3][4][5][6][7][8][9] fuse, [10][11][12][13][14][15][16][17] charge trapping [18][19][20][21][22] memory, and mask read only memory (ROM) 23,24) have been reported. Nowadays, due to growing demand of portable devices, we prefer using the one with better flexibility and less power consumption.…”

Section: Introductionmentioning

confidence: 99%

A new 28 nm high-k metal gate CMOS logic one-time programmable memory cell

Hsiao¹,

Mei²,

Shen³

et al. 2014

Jpn. J. Appl. Phys.

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This work presents a high density high-k metal gate (HKMG) one-time programmable (OTP) cell. Without additional processes and steps, this OTP cell is fully compatible to 28 nm HKMG CMOS process. The OTP cell adopts high-k dielectric breakdown as programming mechanism to obtain more than 105 times of on/off read window. Moreover, it features low power and fast program speed by 4.5 V program voltage in 100 µs. In addition to the ultrasmall cell area of 0.0425 µm2, the superior performance of disturb immunities and data retention further support the new logic OTP cell to be a very promising solution in advanced logic non-volatile memory (NVM) applications.

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“…Flash memories made from poly-Si TFTs with ONO or floating-gate dielectric structures have been reported in the literature. [19][20][21] However, memories made from a-Si:H TFTs are rarely reported. Recently, the floating gate a-Si:H TFT has been fabricated into nonvolatile memories on a glass substrate at 300 C, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

Kuo

2008

jjap

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Thin-film transistor (TFT) and ultra-large scale integrated circuit (ULSIC) have been compared and discussed with respect to the development history, technology trends, and applications. Detailed issues on materials, processes, and devices in the largearea TFT array fabrication and nano-size metal-oxide-semiconductor field effect transistors (MOSFETs) composed ULSIC on large wafers were also examined. The TFT fabrication processes were originally derived from ULSIC. However, there are many unique large-area processes and theories developed during the study of the TFT array fabrication, which can greatly benefit the future large wafer ULSIC production process. Although their future applications will be in different areas, there are opportunities that TFTs can be integrated into ULSIC products to enhance the functions and performance.

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MONOS memory in sequential laterally solidified low-temperature poly-Si TFTs

Cited by 37 publications

References 6 publications

A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications

A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications

A new 28 nm high-k metal gate CMOS logic one-time programmable memory cell

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

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