Monolithic circuits with epitaxial graphene/silicon carbide transistors

Hertel, Stefan; Krieger, Michael; Weber, Heiko B.

doi:10.1002/pssr.201409171

Cited by 6 publications

(3 citation statements)

References 15 publications

(17 reference statements)

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“…When using the difference in chemical potential with respect to third materials (e.g. the SiC substrate itself), sophisticated electronic functionality has recently been demonstrated [8,9].…”

Section: Discussionmentioning

confidence: 99%

“…This manuscript presents a strategy for the fabrication of both materials, MLG and QFBLG, side-by-side on the same chip in a wide range of geometries. It has recently been applied to generate hybrid SiC/graphene transistors [8,9]. In principle, an external resist mask, which covers designated parts and allows the access of hydrogen in open areas, would be the usual approach.…”

Section: Edge-induced Hydrogen Intercalationmentioning

confidence: 99%

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Gateless patterning of epitaxial graphene by local intercalation

et al. 2014

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We present a technique to pattern the charge density of a large-area epitaxial graphene sheet locally without using metallic gates. Instead, local intercalation of the graphene-substrate interface can selectively be established in the vicinity of graphene edges or predefined voids. It provides changes of the work function of several hundred meV, corresponding to a conversion from n-type to p-type charge carriers. This assignment is supported by photoelectron spectroscopy, scanning tunneling microscopy, scanning electron microscopy and Hall effect measurements. The technique introduces materials contrast to a graphene sheet in a variety of geometries and thus allows for novel experiments and novel functionalities.

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Section: Discussionmentioning

confidence: 99%

Section: Edge-induced Hydrogen Intercalationmentioning

confidence: 99%

Gateless patterning of epitaxial graphene by local intercalation

et al. 2014

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“…When the substrate is not chosen as an insulator but rather as a semiconductor, graphene on SiC is a monolithic metal-semiconductor system (see Fig. 1A), in which diodes, transistors, and logic circuits can be implemented ( 18 , 19 ). More specifically, the DC characteristics of n-type 4H SiC and the as-grown graphene ( 20 ) behave like a textbook Schottky diode with a barrier height of Φ = 0.35 eV (see Fig.…”

Section: Introductionmentioning

confidence: 99%

Light-field-driven electronics in the mid-infrared regime: Schottky rectification

et al. 2022

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The speed of an active electronic semiconductor device is limited by RC timescale, i.e., the time required for its charging and discharging. To circumvent this ubiquitous limitation of conventional electronics, we investigate diodes under intense mid-infrared light-field pulses. We choose epitaxial graphene on silicon carbide as a metal/semiconductor pair, acting as an ultrarobust and almost-transparent Schottky diode. The usually dominant forward direction is suppressed, but a characteristic signal occurs in reverse bias. For its theoretical description, we consider tunneling through the light-field–modulated Schottky barrier, complemented by a dynamical accumulation correction. On the basis only of the DC parametrization of the diode, the model provides a consistent and accurate description of the experimentally observed infrared phenomena. This allows the conclusion that cycle-by-cycle dynamics determines rectification. As the chosen materials have proven capabilities for transistors, circuits, and even a full logic, we see a way to establish light-field-driven electronics with rapidly increasing functionality.

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Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface

Krieger¹,

Weber²

2021

Wide Bandgap Semiconductors for Power Electronics

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Monolithic circuits with epitaxial graphene/silicon carbide transistors

Cited by 6 publications

References 15 publications

Gateless patterning of epitaxial graphene by local intercalation

Gateless patterning of epitaxial graphene by local intercalation

Light-field-driven electronics in the mid-infrared regime: Schottky rectification

Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface

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