2014
DOI: 10.1088/0957-4484/26/2/025302
|View full text |Cite
|
Sign up to set email alerts
|

Gateless patterning of epitaxial graphene by local intercalation

Abstract: We present a technique to pattern the charge density of a large-area epitaxial graphene sheet locally without using metallic gates. Instead, local intercalation of the graphene-substrate interface can selectively be established in the vicinity of graphene edges or predefined voids. It provides changes of the work function of several hundred meV, corresponding to a conversion from n-type to p-type charge carriers. This assignment is supported by photoelectron spectroscopy, scanning tunneling microscopy, scannin… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
13
0

Year Published

2015
2015
2021
2021

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(14 citation statements)
references
References 22 publications
(29 reference statements)
1
13
0
Order By: Relevance
“…As described in the preceding section, a subsequent hydrogenation process was applied to intercalate hydrogen at the SiC-graphene interface and convert the initial monolayer (1L) graphene plus carbon buffer to QF2L [20]. We performed this treatment in a way such that only partial hydrogenation occurred, that is, the graphene substrate consisted of QF2L areas coexisting with 1L areas [26]. On such patterned graphene, WSe 2 forms a continuous layer by overgrowing steps between adjacent QF2L and 1L areas.…”
Section: Resultsmentioning
confidence: 99%
“…As described in the preceding section, a subsequent hydrogenation process was applied to intercalate hydrogen at the SiC-graphene interface and convert the initial monolayer (1L) graphene plus carbon buffer to QF2L [20]. We performed this treatment in a way such that only partial hydrogenation occurred, that is, the graphene substrate consisted of QF2L areas coexisting with 1L areas [26]. On such patterned graphene, WSe 2 forms a continuous layer by overgrowing steps between adjacent QF2L and 1L areas.…”
Section: Resultsmentioning
confidence: 99%
“…We use commercially available semi-insulating hexagonal SiC(0001) as a substrate for the subsequent growth of epitaxial graphene [2]. For periodic patterning we chose a minimum invasive technique that yields n-type and ptype epitaxial graphene side-by-side within a continuous graphene sheet by local intercalation which has been detailed in our previous publication [10]. For short, we exploit the inpenetrability of a closed MLG sheet for hydrogen atoms at intermediate temperatures, i.e.…”
Section: Methodsmentioning
confidence: 99%
“…It is certainly a nontrivial question whether this subtle modulation is capable of coupling the electrons in this two-dimensional graphene sheet to electromagnetic radiation. Using a scheme that has been developed in [10], we patterned large-area graphene into p-and n-type stripes to define plasmonic gratings, with a periodicity D = 5 μm and QFBLG-width d = 2.7 μm for sample PN1. In order to define a grating that comprises isolated MLG stripes, the as-grown material in between is removed by oxygen plasma etching.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Of these techniques, intercalation (i.e., the insertion of atoms or molecules beneath or in-between graphene sheets) has been demonstrated as a relatively simple and versatile method for achieving control over graphene's key electrical properties-carrier type, [17][18][19]21] conductivity, [20,[27][28][29] and bandgap. [25,30] For instance, engineering the carrier type and bandgap via intercalation could enable graphene p-n junctions [31][32] and transistors. [33] Whereas increasing graphene's conductivity via intercalation could enable highly conductive and transparent electrodes for solar cells, [34] interconnects, [35] or new superconductors.…”
mentioning
confidence: 99%