WSe
                    <sub>2</sub>
                    homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates

Pan, Yi; Fölsch, Stefan; Lin, Yu Chuan; Jariwala, Bhakti; Robinson, Joshua A.; Nie, Yifan; Cho, Kyeongjae; Feenstra, R. M.

doi:10.1088/2053-1583/aaf58c

Cited by 10 publications

(4 citation statements)

References 44 publications

(69 reference statements)

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“…Red, blue and yellow spheres represent W, S and Co atoms, respectively. [35]. The optimized thickness and lattice constant of monolayer WS 2 are 4.47 Å and 3.19 Å, respectively; the length of W-S bond and the angle of S-W-S bond are measured to be 2.42 Å and 81 • , respectively, which are well consistent with previous work [36].…”

Section: Resultssupporting

confidence: 88%

Magnetism manipulation of Co_n-adsorbed monolayer WS₂ through charge injection

Tang

Chen

et al. 2020

J. Phys.: Condens. Matter

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The design and manipulation of magnetism in low-dimensional systems are desirable for the development of spin electronic devices. Here, we design two kinds of Co-adsorbed monolayer WS 2 frameworks, i.e. Co 1 /WS 2 and Co 2 /WS 2 , and comprehensively explore the dependences of their magnetic properties on injected charge by using first-principles calculations. The value of magnetic moment can be tuned almost linearly through injecting charge due to the modulated interaction and charge transferring between Co atom and monolayer WS 2 . A transition from ferromagnetism to non-ferromagnetism occurs in Co 1 /WS 2 system when 1 e/unit cell charge is injected. Furthermore, the magnetic anisotropy can be manipulated by injecting charge as well. The magnetic anisotropy energy (MAE) in Co 1 /WS 2 system sharply increases from −4.16 to 2.47 (0.99) meV when injected charge vary from 0.0 to 0.2 (−0.2) e/unit cell, meaning a transition of the magnetic easy axis from in-plane to out-of-plane direction. Similarly, in Co 2 /WS 2 system, the magnetic easy axis also can be modified to out-of-plane direction through injecting 0.1 e/unit cell charge. It is found that the changes of Co-3d states are responsible for the tunable magnetic anisotropy. This work provides a theoretical understanding on effective manipulation of magnetism in low-dimensional system.

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Section: Resultssupporting

confidence: 88%

Magnetism manipulation of Co_n-adsorbed monolayer WS₂ through charge injection

Tang

Chen

et al. 2020

J. Phys.: Condens. Matter

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“…For monolayer WSe 2 (CZTS NPs), the band gap is evaluated to be 1.74 eV (1.5 eV) with an electron affinity of 3.53 eV (3.6 eV). , The valence band (VB) and the conduction band (CB) are displayed with dashed lines in Figure c. Based on these, the band structure of these materials before the junction and its corresponding band bending after creating the heterojunction are drawn in Figure d.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Ghods

Vardast

Esfandiar

et al. 2022

ACS Appl. Electron. Mater.

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High-performance photodetectors play critical roles in numerous photon-based applications in imaging, communication, and energy harvesting. Nowadays, heterostructures have received significant attention to extend the performance of photodetectors, with exceptionally high optical absorption and a wide absorption range. However, the enhancement factors, exact mechanism, and facile fabrication procedures are long-standing problems. Here, a heterojunction of a two-dimensional chemical vapor deposition-grown monolayer of WSe 2 with a Cu 2 ZnSnS 4 (CZTS) film is introduced. The CZTS film as an abundant material was synthesized in the form of nanoparticles, and it showed a great effect on the enhancement of light absorption. By control of the gate voltage, the results of optoelectronic measurements reveal fast response (2.5 ms) and broadband photoresponsivity (∼550 A/W for 395−980 nm), which are about 2500 times higher than those of a conventional WSe 2 structure. The energy band structure at the interface of the heterojunction and simulated data with/without a gate voltage were used to investigate the device operation mechanism. It has been realized that the gate voltage has direct impacts on increasing the photocurrent and suppressing the recombination of the photocarriers. The observed experimental results and the proposed mechanism pave shortcuts to developing efficient photodetectors based on transition metal dichalcogenides and earth-abundant materials.

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“…One can easily obtain the layer-engineered homojunctions by means of mechanical exfoliation or vapor-phase deposition as the products are usually composed of various regions with different thickness. The layer-engineered homojunctions may exhibit type-I or type-II band alignment [64][65][66][67][68] and thus demonstrate characteristics similar to the p-n junction, such as rectification behavior and photovoltaic effect. [46,69,70]…”

Section: Classification Of 2d Homojunctionsmentioning

confidence: 99%

2D Homojunctions for Electronics and Optoelectronics

Wang

Pei

et al. 2021

Advanced Materials

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In the post‐Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p–n homojunctions, heterophase homojunctions, and layer‐engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor‐phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field‐effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light‐emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.

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WSe ₂ homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates

Cited by 10 publications

References 44 publications

Magnetism manipulation of Co_n-adsorbed monolayer WS₂ through charge injection

Magnetism manipulation of Co_n-adsorbed monolayer WS₂ through charge injection

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

2D Homojunctions for Electronics and Optoelectronics

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WSe 2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates

Cited by 10 publications

References 44 publications

Magnetism manipulation of Co n -adsorbed monolayer WS2 through charge injection

Magnetism manipulation of Co n -adsorbed monolayer WS2 through charge injection

Enhanced Broadband Photoresponsivity of the CZTS/WSe2 Heterojunction by Gate Voltage

2D Homojunctions for Electronics and Optoelectronics

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Product

Resources

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WSe ₂ homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates

Magnetism manipulation of Co_n-adsorbed monolayer WS₂ through charge injection

Magnetism manipulation of Co_n-adsorbed monolayer WS₂ through charge injection

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage