Wide Bandgap Semiconductors for Power Electronics 2021
DOI: 10.1002/9783527824724.ch10
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Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface

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Cited by 2 publications
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“…The production of highly ordered and clean epitaxial graphene films can be credited to the very high annealing temperature (<1400 °C) and high Ar pressure. An additional benefit of this technique over other bottom-up techniques such as CVD is the non-existence of the requirement to transfer graphene to other substrates, providing the ability to produce, with ease, electronic devices such as radio frequency (RF) transistors, field effect transistors (FET), integrated circuits (IC), and sensors directly on semiconducting or semi-insulating SiC [ 91 , 92 , 93 ]. Graphene synthesis on the SiC substrate (6H- and 4H-SiC) has been frequently used; however, achieving larger graphene areas with consistent thickness in a controlled manner continues to be an immense challenge.…”
Section: Graphene Synthesismentioning
confidence: 99%
“…The production of highly ordered and clean epitaxial graphene films can be credited to the very high annealing temperature (<1400 °C) and high Ar pressure. An additional benefit of this technique over other bottom-up techniques such as CVD is the non-existence of the requirement to transfer graphene to other substrates, providing the ability to produce, with ease, electronic devices such as radio frequency (RF) transistors, field effect transistors (FET), integrated circuits (IC), and sensors directly on semiconducting or semi-insulating SiC [ 91 , 92 , 93 ]. Graphene synthesis on the SiC substrate (6H- and 4H-SiC) has been frequently used; however, achieving larger graphene areas with consistent thickness in a controlled manner continues to be an immense challenge.…”
Section: Graphene Synthesismentioning
confidence: 99%