Monolithic Barrier-All-Around High Electron Mobility Transistor with Planar GaAs Nanowire Channel

Abstract

High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility transistors (NW-HEMTs) are achieved. The peak extrinsic transconductance, drive current, and effective electron velocity are 550 μS/μm, 435 μA/μm, and ~2.9 × 10(7) cm/s, respectively, at 2 V supply voltage with a gate length of 120 nm. The excellent DC performance demonstrated here shows the potential of this bottom-up planar NW technology for low-power high-speed very-large-scale-integration (VLSI) circuits.

Vapor-Liquid-Solid Growth of Semiconductor Nanowires

“…Figure 9.10(c) shows the epitaxial relation between a GaAs planar nanowire and the substrate, and the interface between the Au catalyst NP and the planar nanowire is also shown. High carrier mobility was extracted from planar nanowire-based field effect transistors (FETs), which verified the high crystal quality of <110> GaAs planar nanowires [125][126][127]. High carrier mobility was extracted from planar nanowire-based field effect transistors (FETs), which verified the high crystal quality of <110> GaAs planar nanowires [125][126][127].…”

“…As can be seen, the <110> GaAs planar nanowires have pure zinc-blende crystal structure and (111) B growth fronts (note that the NP/nanowire interface was altered during the reactor cool-down). Using further optimized growth conditions such as atmospheric reactor pressure, high group III (TMGa) molar flow, low V/III ratio (TMGa/AsH 3 ) and a two-temperature nanowire growth step, high-quality sub-50-nm GaAs planar nanowires with a tapering factor of better than 1:1000 have been achieved [127]. Using further optimized growth conditions such as atmospheric reactor pressure, high group III (TMGa) molar flow, low V/III ratio (TMGa/AsH 3 ) and a two-temperature nanowire growth step, high-quality sub-50-nm GaAs planar nanowires with a tapering factor of better than 1:1000 have been achieved [127].…”

Material conversion of GaAs nanowires

“…Within the various systems, compound III–V semiconductor nanowires, represented by GaAs, InP, GaN because of their high mobility and optical characteristics have numerous potential applications in nanoelectronics , catalysis, chemical sensing, and energy storage . Material conversion for III–V materials, e.g., oxidation of AlGaAs used for vertical cavity surface emitting lasers to introduce electrical and optical confinement, can largely extend the functions of the system by the integration of contrasting material systems.…”

InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy

“…The planar NWs are completely compatible with standard planar processing technology. Many types of devices, including MESFETs [10], HEMTs [11] and MOSFETs [12], and simple circuits [13] have been demonstrated to show good performance by homogenous SLE, namely, GaAs planar NWs on GaAs substrates.…”