Material conversion of GaAs nanowires

Abstract

We investigate material conversion of compound semiconductor GaAs nanowires to extend their functions. By heating the GaAs nanowires in indium melt, the indium was introduced into the GaAs nanowire, converting the nanowires to be InGaAs compounds. The further heating treatment in N2 ambient progresses the diffusion of Si element from the substrate, eventually forming the indium–silicide compound nanowires. The results suggest the conversion technique possibly extend the functions of the nanowire system by the exchange, introduction, or integrations of various materials.