Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

Abstract

This letter reports the significant N-shaped negative-differential resistance characteristics with three-terminal controllability of a monolithic heterostructure resonant tunneling field-effect transistor, realized by integrating the AlAs-In 0 25 Ga 0 75 As-AlAs double-barrier single-well resonant tunneling (RT) structure into the drain regime of the In 0 49 Ga 0 51 P-In 0 25 Ga 0 75 As-GaAs -high-electron mobility transistor. A peak-to-valley current ratio in excess of 960 at room temperature has been demonstrated, with a peak current density ( ) of 50.6 mA/mm, and a valley current density ( ) of 52.7 A mm, respectively, with a transistor gate length of 1.0 m. The maximum current drive density was observed to be 478 A mm-cm 2 .Index Terms-Heterostructure resonant tunneling field-effect transistor (HRT-FET), high-electron mobility transistor (HEMT), negative-differential resistance (NDR), peak-to-valley current ratio (PVCR), resonant tunneling (RT).

The New Material Structure Design and Research of the GaAs-Based Resonant Tunneling Diodes

“…It has the characteristic of high-frequency, high-speed, low power consumption which other devices do not have, put its unique negative resistance effect into application can make it completed the work alone that other device must complete it with mutiple devices, thereby it reduce the usage of the device and save a lot of resources. Its small size and powerful function make it has expansive application foreground in electronic industry [4][5][6] .…”