Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit

Gan, Kwang–Jow; Liang, Dong-Shong

doi:10.1587/transele.e93.c.514

Cited by 3 publications

(1 citation statement)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Once voltage reaches threshold voltage V th , there is a sharp decrease in voltage accompanied by rapid increase in current until it stabilizes at low resistance state indicating amorphous to crystalline transition of film occurs. This negative resistance phenomenon can be observed from the figure, the threshold voltages of the film in flat state, bent state and after being subjected to 1000 bending cycles are 1.05, 2.02 and 2.25 V respectively, which means that bending will increase the operating power consumption of the device 50 . Figure 5d, e, and f show the R-V curves of the PCM device based on the flexible [Ge(5 nm)/Sb(5 nm)] 8 multilayer film on PEEK substrate in flat state, bending state, and after bending 1000 times, respectively.…”

Section: Resultsmentioning

confidence: 83%

Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

Wang,

Hu,

2024

npj Flex Electron

View full text Add to dashboard Cite

Flexible information memory is the key component of flexible electronic devices and the core of intelligent wearable devices. In this paper, Ge/Sb multilayer phase change films of various thickness ratios were prepared using polyether ether ketone as substrate, and their flexible phase change properties and device conversion characteristics were studied. After bending for 100000 times and bending experiments with different bending radius, the film can still realize the transition from amorphous to crystalline states, and the resistance fluctuation was small. Bending, stretching and pressing of the film resulted in grain refinement and increasing of crystalline resistance. The flexible electronic devices using Ge/Sb multilayer films were prepared. The phase change memory device can realize reversible conversion between SET and RESET states with different pulse widths in flat, bent states and after bending many times. All findings show that Ge/Sb multilayer films on PEEK substrate have broad application prospects in high-performance flexible memory in the future.

show abstract

Section: Resultsmentioning

confidence: 83%