The New Material Structure Design and Research of the GaAs-Based Resonant Tunneling Diodes

Abstract

Use MBE technology grew three different structures’ RTD to get a contrast test on device with different thickness of well structure’s DC character,they all grew on semi-insulating GaAs substrates, and use I-V analysis instrument tested the I-V character of the RTD in room temperature, in the test results , the PVCR of the best device was up to 7.1,VP is reduced to 0.4V ,then we analyzed the relationship between the device material structure and I-V character , this paper provided a reference for the better performance of the RTD structure design.