The electron in the RTD has a high mobility with the resonant tunneling effect. We have embedded the RTD in the structure of MEMS sensor using the meso-piezoresistive effect. The sensitivity of sensors is higher one order of magnitude than the accelerometer which used the silicon piezoresistive strip as sensitive unit. In this paper, we optimize the temperature effect of RTD as the sensitive unit of sensors by reducing the size of emitter mesa of RTD structure. In the experiment, the temperature coefficient reduces from 10μA/°C to 5.22μA/°C at the peak, and reduces from 35μA/°C to 13.88μA/°C at the valley. Meanwhile, the temperature effect of bias voltage sensitivity reduces from 6mA/°C to 2mA/°C at the valley. Finally, the reliability and precision of RTD structure used as the sensitive unit of MEMS sensors is improved.
In order to measure the pressure in the ultra-low temperature condition, the structure of ultra-low temperature piezoresistive pressure sensor is designed. Polysilicon nanometer thin film is used as a varistor according to its temperature and piezoresistive characteristics. The effect of the dimensions of silicon elastic membrane for the sensor sensitivity and the strain dimensions of the elastic membrane are analyzed, then layout position of resistances is arranged. The package structure of pressure sensor is designed. Meanwhile, a low-temperature sensor is designed to compensate the temperature influence to the pressure sensor.
This paper reports the design of a tunable radio-frequency (RF) inductor and analyses the parameters that influence the quality factor (Q) of the inductor. In our paper we mainly discuss the influence of the thickness of the metal layer on the Q when other parameters are fixed. In order to achieve the high thickness, we use SU-8 as our photoresist instead of the traditional photoresist. Through the analysis, we calculate out the thickness of the metal layer is 23um when the Q reaches to maximum.
This paper reports the fabrication of a tunable radio-frequency (RF) inductor and discusses the parameters that influence the quality factor (Q) of the inductor. The influence of the thickness of the metal layer on Q is mainly emphasized when other parameters are fixed. In the process of the fabrication, SU-8 is used as photoresist instead of the traditional photoresist. This paper aims to get higher Q for the tunable inductor.
This paper describes a novel inductive accelerator and investigates some of the parameters affecting its performance. As a important component of the accelerator, the resonator is composed of a new-style tunable inductor and a fixed capacitor. When an acceleration is applied on the resonator in the vertical direction, we can acquire the acceleration value by measuring the changes of the resonant frequency passing through a differential frequency circuit. Design and simulation, we get out the frequency of the accelerator is proportional to the acceleration, inductance variation ranges from 0 to 0.2*10-9H, and frequency variation is from 0 to 5.7*109HZ when the capacitor spacing is 2um. We use SU-8 photoresist to fabricate thick metal layer.
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