Monitoring of ion mass composition in plasma immersion ion implantation

Kim, G.H.; Rim, Geun-Hie; Никифоров, С. А.

doi:10.1016/s0257-8972(00)01026-4

Cited by 9 publications

(1 citation statement)

References 13 publications

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“…These phenomena are similar to that observed in Refs. [45] and [46], i.e., the N + ion density increases faster with the RF power than the N + 2 ion density. The radial distributions of the total ion flux at the substrate surface for various bias voltages averaged over one pulse period are shown in Fig.…”

Section: Pulsed Bias Voltage Effectmentioning

confidence: 99%

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Sun

Zhang

et al. 2017

Chinese Phys. B

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Planar radio frequency inductively coupled plasmas (ICP) are employed for low-voltage ion implantation processes, with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional (2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to −4000 V, due to the heating of the capacitive field caused by the bias power. The N + fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N + 2 fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and 40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.

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Section: Pulsed Bias Voltage Effectmentioning

confidence: 99%

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Sun

Zhang

et al. 2017

Chinese Phys. B

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Predicted depth profiles for nitrogen‐ion implantation into gallium arsenide

Risch

Bradley

2008

Phys. Status Solidi (c)

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We present a new method to predict the spatial variation of the band gap in nitrogen‐implanted gallium arsenide. Band gap engineering of a GaAsN alloy was employed to design an emission peak at 1.3 µm. Based on SRIM simulations, we propose a concentration of 6% N in GaAs at the plateau of the trapezoidal depth profile for the desired band gap. The depth profile could be manufactured by virtue of subsequent high voltage pulses. Software based on the Lieberman model was developed to predict fluences from measurements of a simple Langmuir probe and the time dependent electrode potential. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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