Predicted depth profiles for nitrogen‐ion implantation into gallium arsenide

Abstract

We present a new method to predict the spatial variation of the band gap in nitrogen‐implanted gallium arsenide. Band gap engineering of a GaAsN alloy was employed to design an emission peak at 1.3 µm. Based on SRIM simulations, we propose a concentration of 6% N in GaAs at the plateau of the trapezoidal depth profile for the desired band gap. The depth profile could be manufactured by virtue of subsequent high voltage pulses. Software based on the Lieberman model was developed to predict fluences from measurements of a simple Langmuir probe and the time dependent electrode potential. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)