Modification of GaAs Schottky diodes by thin organic interlayers

Vearey-Roberts, A. R.; Evans, D. A.

doi:10.1063/1.1864255

Cited by 140 publications

(56 citation statements)

References 15 publications

(35 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Gavrila et al [21] have reported a barrier enhancement of 0.3 eV with DiMePTCDI interlayers on S-GaAs(100). There are many other reports of PTCDI and PTCDA modifications on GaAs [11,[22][23][24].…”

Section: Introductionmentioning

confidence: 98%

Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

et al. 2015

View full text Add to dashboard Cite

Schottky contacts of Au/n-GaAs diodes with and without organic interlayer were fabricated. The roomtemperature I-V and C-V characteristics were analyzed in both forward and reverse bias conditions. The forward current followed thermionic emission, whereas the reverse current followed tunneling mechanism. The barrier height of the modified structure revealed an enhancement due to organic interlayer compared to the pure diode. The increment was explained on the basis of organic interlayer-induced dipole at the interface. The modification was also found to passivate the GaAs surface and reduce the reverse leakage current.

show abstract

Section: Introductionmentioning

confidence: 98%

Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

et al. 2015

View full text Add to dashboard Cite

show abstract

“…This indicates that the introduction of PANI interlayer influenced the interfacial potential barrier of the Ti/InP Schottky junction, resulting in a modification of the effective barrier height, as shown in Fig. 2 [6,23,24]. Namely, PANI interlayer can act as a physical barrier between Ti film and p-type InP substrate for preventing their direct contact, causing a substantial shift in the work function of a metal and in the electron affinity of a semiconductor.…”

Section: Resultsmentioning

confidence: 99%

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

Reddy¹,

Janardhanam²,

Jyothi³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

Abstract-The electrical properties of Ti/p-type InPSchottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the spacecharge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

show abstract

“…According to Roberts and Evans, the change in the barrier height is attributed to the change in the inorganic substrate band bending due to interaction between the metal layer and the organic modified substrate. 28,29) Typical ideality factors determined by the effect of image force lowering are close to 1.01 or 1.02. 30,31) The higher ideality factor values in the Au/CuPc/n-GaN structure could be attributed to secondary mechanisms such as interfacial dipoles caused by the organic interlayer or a specific interface structure or even fabrication-induced interfacial defects.…”

Section: Resultsmentioning

confidence: 99%

Electrical Properties and Carrier Transport Mechanism of Au/<i>n</i>-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

et al. 2014

View full text Add to dashboard Cite

We investigated the electrical characteristics of Au/n-GaN Schottky rectifier incorporating a copper pthalocyanine (CuPc) interlayer using currentvoltage (IV), capacitancevoltage (CV) and conductancevoltage (GV) measurements. The barrier height of the Au/CuPc/n-GaN Schottky contact was higher than that of the Au/n-GaN Schottky diode, indicating that the CuPc interlayer influenced the space charge region of the n-GaN layer. The series resistance of Au/CuPc/n-GaN Schottky contact extracted from the CV and GV methods was dependent on the frequency. In addition, the series resistance obtained from CV and GV characteristics was comparable to that from Cheung's method at sufficiently high frequencies and in strong accumulation regions. The forward log Ilog V plot of Au/CuPc/n-GaN Schottky contact exhibited four distinct regions having different slopes, indicating different conduction mechanisms in each region. In particular, at higher forward bias, the trap-filled space-charge-limited current was the dominant conduction mechanism of Au/CuPc/n-GaN Schottky contact, implying that the most of traps were occupied by injected carriers at high injection level.

show abstract

Modification of GaAs Schottky diodes by thin organic interlayers

Cited by 140 publications

References 15 publications

Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

Electrical Properties and Carrier Transport Mechanism of Au/<i>n</i>-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

Contact Info

Product

Resources

About